Plasmonic FET terahertz spectrometer using Si MOS, InGaAs and GaN HEMTs and p-diamond FETs
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2020-08-20 |
| Authors | Xueqing T. Liu, Trond Ytterdal, M. S. Shur |
| Institutions | Rensselaer Polytechnic Institute, Norwegian University of Science and Technology |
| Citations | 2 |
Abstract
Section titled āAbstractāTHz spectrometers in the frequency range from 120 GHz to 9.3 THz could be implemented using single Si MOSFETs, AlGaN/GaN HEMTs, AlGaAs/InGaAs HEMTs, and p-diamond FETs. The spectrometer detects the rectified voltage between the source and drain that is proportional to the sine of the phase shift between the voltages induced by the THz signal between gate-to-drain and gate-to-source terminals. This phase difference could be created by using different antennas for the source-to-gate and drain-to gate contacts or by using a delay line introducing a phase shift. The FET with the gate lengths from 20 nm to 130 nm could operate at room temperature as with different frequency ranges requiring different features sizes. The spectrometers are simulated using the multi segment unified charge control model implemented in SPICE and ADS.