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6CCVD Research

Application of 2DHG Diamond p-FET in Cascode With Normally-OFF Operation and a Breakdown Voltage of Over 1.7 kV

At a Glance

Section titled ā€œAt a Glanceā€
MetadataDetails
Publication Date2020-09-09
JournalIEEE Transactions on Electron Devices
AuthorsTe Bi, Junxiong Niu, Nobutaka Oi, Masafumi Inaba, Toshio Sasaki
InstitutionsWaseda University
Citations14

Abstract

Section titled ā€œAbstractā€

Hydrogen-terminated (C-H) diamond has a high current density owing to the 2-D hole gas (2DHG) on its C-H diamond surface. The C-H diamond metal-oxide-semiconductor field-effect transistor (MOSFET) has high-breakdown-voltage characteristics but exhibits normally-ON operation. For security and energy-saving purposes, we fabricated the diamond cascode using the C-H diamond p-channel field-effect transistor (p-FET) combination with the normally- OFF silicon p-FET. The diamond cascode exhibits normally- OFF characteristics and a high breakdown voltage of more than 1.7-kV.

Tech Support

Section titled ā€œTech Supportā€

Original Source

Section titled ā€œOriginal Sourceā€

References

Section titled ā€œReferencesā€
  1. 2012 - Refractory two-dimensional hole gas on hydrogenated diamond surface [Crossref]
  2. 2014 - High-reliability passivation of hydrogen-terminated diamond surface by atomic layer deposition of Al2O3 [Crossref]

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