The Frenkel–Poole Effect in the Ionization of an Acceptor Impurity of Boron in Diamond in a Strong Electric Field
At a Glance
Section titled “At a Glance”| Metadata | Details |
|---|---|
| Publication Date | 2020-11-01 |
| Journal | Journal of Communications Technology and Electronics |
| Authors | И. В. Алтухов, M. S. Kagan, S. K. Paprotskii, N. A. Khval’kovskii, N. B. Rodionov |
| Institutions | Troitsk Institute for Innovation and Fusion Research, Institute of Radio-Engineering and Electronics |
| Citations | 1 |
Abstract
Section titled “Abstract”The conductivity of epitaxial diamond films lightly doped with boron has been studied at strong electric fields up to ~5 × 105 V/ cm. It is shown that field ionization of boron acceptors in diamond at room temperature, because of the low concentration of free holes and the high binding energy of boron, occurs due to the Frenkel-Poole effect.
Tech Support
Section titled “Tech Support”Original Source
Section titled “Original Source”References
Section titled “References”- 1991 - Nonradiative Recombination in Semiconductors