High performance ionic-liquid-gated air doped diamond field-effect transistors
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2020-12-04 |
| Journal | Nanotechnology |
| Authors | Bo Hsu, Sidra Farid, Joseph Averion-Puttrich, Anirudha V. Sumant, Michael A. Stroscio |
| Institutions | University of Illinois Chicago, Argonne National Laboratory |
Abstract
Section titled āAbstractāAbstract We report successful fabrication of high performance ion-gated field-effect transistors (FETs) on hydrogenated diamond surface. Investigations on the hydrogen (H)-terminated diamond by Hall effect measurements shows Hall mobility as high as ā¼200 cm 2 V ā1 s ā1 . In addition we demonstrate a rapid fabrication scheme for achieving stable high performance devices useful for determining optimal growth and fabrication conditions. We achieved H-termination using hydrogen plasma treatment with a sheet resistivity as low as ā¼1.3 kĪ©/sq. Conductivity through the FET channel is studied as a function of bias voltage on the liquid ion-gated electrode from ā3.0 to 1.5 V. Stability of the H-terminated diamond surface was studied by varying the substrate temperature up to 350 Ā°C. It was demonstrated that the sheet resistance and carrier densities remain stable over 3 weeks in ambient air atmosphere even at substrate temperatures up to 350 Ā°C, whereas increasing temperature beyond this limit has effected hydrogenation. This study opens new avenues for carrying out fundamental research on diamond FET devices with ease of fabrication and high throughput.