Growth defects in heteroepitaxial diamond
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2021-04-22 |
| Journal | Journal of Applied Physics |
| Authors | V. Lebedev, Jan Engels, Jan Kustermann, JĆ¼rgen Weippert, V. Cimalla |
| Institutions | Fraunhofer Institute for Mechanics of Materials, Fraunhofer Institute for Surface Engineering and Thin Films |
| Citations | 12 |
Abstract
Section titled āAbstractāIn focus of this report are the mechanisms of formation, propagation, and interaction of growth defects in heteroepitaxial diamond films along with their impact on the optical emission properties of N- and Si-vacancy (NV and SiV) color centers. Here, we analyze and discuss the properties of incoherent grain boundaries (IGBs) and extended defects in a nitrogen- and boron-doped heterodiamond nucleated and grown on Ir(001) via bias-enhanced nucleation and chemical vapor deposition techniques. We show that the low-angle IGBs alter the structural and optical emission properties of NV and SiV complexes by subduing NV emission and supporting the formation of interstitial Si-vacancy complexes dominating in the faulted IGB regions. We also demonstrate that the IGB-confined threading dislocations are responsible for the vertical transport and incorporation of Si impurities in thick layers, leading to an enhanced SiV emission from the IGBs.
Tech Support
Section titled āTech SupportāOriginal Source
Section titled āOriginal SourceāReferences
Section titled āReferencesā- 2020 - Diamond for Quantum Applications Part 2
- 2015 - Novel Aspects of Diamond, Topics in Applied Physics 121 [Crossref]