Ohmic and Schottky contacts of hydrogenated and oxygenated boron-doped single-crystal diamond with hill-like polycrystalline grains*
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2021-05-20 |
| Journal | Chinese Physics B |
| Authors | Jingcheng Wang, Hao Chen, Linfeng Wan, Cao-Yuan Mu, Yaofeng Liu |
| Citations | 5 |
Abstract
Section titled āAbstractāHill-like polycrystalline diamond grains (HPDGs) randomly emerged on a heavy boron-doped p + single-crystal diamond (SCD) film by prolonging the growth duration of the chemical vapor deposition process. The Raman spectral results confirm that a relatively higher boron concentration (ā¼ 1.1 Ć 10 21 cm ā3 ) is detected on the HPDG with respect to the SCD region (ā¼ 5.4 Ć 10 20 cm ā3 ). It demonstrates that the Au/SCD interface can be modulated from ohmic to Schottky contact by varying the surface from hydrogen to oxygen termination. The current-voltage curve between two HPDGs is nearly linear with either oxygen or hydrogen termination, which means that the HPDGs provide a leakage path to form an ohmic contact. There are obvious rectification characteristics between oxygen-terminated HPDGs and SCD based on the difference in boron doping levels in those regions. The results reveal that the highly boron-doped HPDGs grown in SCD can be adopted as ohmic electrodes for Hall measurement and electronic devices.