Substrates with Diamond Heat Sink for Epitaxial GaN Growth
At a Glance
Section titled “At a Glance”| Metadata | Details |
|---|---|
| Publication Date | 2021-05-01 |
| Journal | Technical Physics Letters |
| Authors | И. О. Майборода, И. А. Черных, Vadim Sedov, A. S. Altakhov, А. А. Андреев |
| Institutions | Prokhorov General Physics Institute, Kurchatov Institute |
| Citations | 2 |
Abstract
Section titled “Abstract”Silicon wafers with a polycrystalline diamond heat sink have been fabricated; the silicon and diamond layers have thicknesses of 234 nm and 250 μm, respectively. The diamond thermal conductivity is 1290 ± 190 W/(m K). Nitride heterostructures with two-dimensional electron gas have been grown on silicon substrates with a polycrystalline diamond heat sink using ammoniacal molecular-beam epitaxy. The electron mobility in the two-dimensional electron gas and its sheet resistance are 1600 cm2/(V s) and 300 Ω/□, respectively.