Applications of Nanodiamond films deposited by coaxial arc plasma deposition method
At a Glance
Section titled âAt a Glanceâ| Metadata | Details |
|---|---|
| Publication Date | 2021-10-21 |
| Journal | Proceedings of International Exchange and Innovation Conference on Engineering & Sciences (IEICES) |
| Authors | Abdelrahman Zkria |
| Institutions | Kyushu University, Ion Exchange (India) |
| Analysis | Full AI Review Included |
Applications of Nanodiamond Films by Coaxial Arc Plasma Deposition (CAPD)
Section titled âApplications of Nanodiamond Films by Coaxial Arc Plasma Deposition (CAPD)âExecutive Summary
Section titled âExecutive SummaryâThis research details the successful deposition and application of Nanodiamond (ND) films using the Coaxial Arc Plasma Deposition (CAPD) method, offering significant advantages over traditional Chemical Vapor Deposition (CVD).
- Novel Deposition Method: CAPD enables the growth of high-quality ND films via Physical Vapor Deposition (PVD) without the need for substrate pretreatment (seeding) or high substrate temperatures (room temperature capability).
- Semiconductor Fabrication: Successful realization of both n-type (Nitrogen-doped) and p-type (Boron-doped) ND semiconductors, crucial for electronic device integration.
- Electronic Performance: Fabricated ND/Si heterojunction diodes demonstrated high rectifying action and effective photodetection properties.
- Superior Film Properties: ND films exhibit advantageous characteristics, including conformal coating capabilities, high surface smoothness, and unique optical/electrical properties derived from a high density of grain boundaries (GBs).
- Hard Coating Applications: ND films were successfully deposited on Tungsten carbide (WC-Co) substrates, suitable for high-durability and hard coating requirements.
- Biomedical Integration: ND films were grown on biocompatible substrates, including titanium (Ti) and zirconia (ZrO2), targeting applications in medical implants and artificial joints.
Technical Specifications
Section titled âTechnical SpecificationsâThe following table summarizes key operational parameters and material characteristics derived from the CAPD process and resulting films.
| Parameter | Value | Unit | Context |
|---|---|---|---|
| Deposition Method | Coaxial Arc Plasma Deposition (CAPD) | N/A | Physical Vapor Deposition (PVD) technique |
| Repetition Rate (R. R.) | 5 | Hz | Plasma gun operation frequency |
| Operating Voltage | 100 | V | Plasma gun power supply |
| Capacitance | 720 | ”F | Energy storage for plasma discharge |
| Gas Pressure | 53.3 | Pa | Chamber operating pressure |
| Substrate Pretreatment | Not Required | N/A | Key advantage over CVD (no diamond seeding needed) |
| Minimum Deposition Temperature | Room Temperature | °C | Achievable temperature for ND growth |
| N-type Dopant | Nitrogen (N) | N/A | Used for n-type semiconductor realization |
| P-type Dopant | Boron (B) | N/A | Used for p-type semiconductor realization |
| Example Film Thickness (N-UNCD) | 400 | nm | Thickness shown in cross-section image |
| Diode Substrate Material | p-Si (111) | N/A | Used for ND/Si heterojunction diode fabrication |
Key Methodologies
Section titled âKey MethodologiesâThe Nanodiamond films were synthesized using the CAPD method, focusing on low-temperature processing and controlled doping.
- Deposition Technique: Coaxial Arc Plasma Deposition (CAPD) was employed, utilizing a graphite anode as the carbon source.
- Plasma Generation: The arc plasma gun operates at 100 V and 5 Hz repetition rate, using a 720 ”F capacitor bank to generate C+ ions.
- Growth Environment: The process occurs under a low-pressure hydrogen (H2) environment (53.3 Pa), facilitating the formation of sp3-bonded diamond grains from C+ and H/C+ species.
- Low-Temperature Advantage: Unlike traditional CVD, CAPD successfully achieves ND film growth without the high substrate temperatures or the initial diamond powder seeding procedure.
- Semiconductor Doping:
- Nitrogen (N) was introduced during deposition to create n-type Nanodiamond semiconductors.
- Boron (B) was introduced during deposition to create p-type Nanodiamond semiconductors.
- Device Integration: The doped ND films were deposited onto p-Si (111) substrates to form functional ND/Si heterojunction diodes, demonstrating rectification and photodetection.
- Application Substrates: ND films were deposited on various engineering materials to test specific applications:
- Tungsten carbide (WC-Co) for hard coating tests.
- Titanium (Ti) and Zirconia (ZrO2) for biomedical compatibility and implant applications.
Commercial Applications
Section titled âCommercial ApplicationsâThe unique properties and low-temperature deposition capability of CAPD-grown Nanodiamond films open doors to several high-value engineering and industrial sectors.
| Industry Sector | Specific Application | Technical Benefit |
|---|---|---|
| Biomedical Devices | Artificial joints, Dental implants, Internal prosthetics | High biocompatibility, chemical inertness, and conformal coating on Ti/ZrO2 substrates. |
| Power Electronics | ND/Si Heterojunction Diodes, Rectifiers | High rectifying action, potential for high-temperature and high-power operation due to diamond stability. |
| Optoelectronics | Photodetection devices, UV sensors | Unique optical properties and high sensitivity demonstrated by the ND/Si junction. |
| Tooling & Manufacturing | Hard coatings on cutting tools (e.g., WC-Co) | Extreme hardness, wear resistance, and low friction provided by the ND film. |
| Semiconductor Manufacturing | Thin-film deposition, Nanomaterials synthesis | Ability to create both n-type and p-type diamond semiconductors at low temperatures, enabling integration with temperature-sensitive substrates. |
| Surface Engineering | Protective coatings for complex geometries | Conformal coating properties and high surface smoothness, enhancing durability and performance. |
View Original Abstract
Nanodiamond (ND) films have a superior properties which are strongly depends on their unique structure.The applications of ND films mechanically, biomedically, and electronically are attributable to their advantageous properties including conformal coating properties, high surface smoothness, unique optical and electrical properties originate from a large number of grain boundaries (GBs).Nanodiamond films are mainly prepared by chemical vapor deposition (CVD).In CVD, the initial nucleation of diamond is required, specifically, a seeding procedure with diamond powders as a pretreatment of substrates prior to the film deposition, and high substrate temperature.On the other hand, we have successfully realized the growth of ND films by physical vapor deposition method, namely, coaxial arc plasma deposition (CAPD), without the pretreatment of substrates and at room temperature.In our research group, we realized the growth of nanodiamond films by CAPD method.We demonstrated the n-and p-type ND semeiconductors by Nitrogen and Boron doping, respectively.The fabricated ND/Si heterojunction diodes exhibited a high rectifying action and photodetection properties.Additionally, ND films depsoited on Tungsten carbide (WC-Co) for Hard coating applications.Furthermore, ND films are grown on titanium and zirconia substartes for biomedical appliations, including implants and artificial joints.Coaxial arc plasma deposition method, and Nanodiamond films deposited on different substrates for varrious applcations.