Resonant boron acceptor states in semiconducting diamond
At a Glance
Section titled “At a Glance”| Metadata | Details |
|---|---|
| Publication Date | 2021-10-08 |
| Journal | Physical review. B./Physical review. B |
| Authors | S. G. Pavlov, D. D. Prikhodko, С. А. Тарелкин, В. С. Бормашов, N. V. Abrosimov |
| Institutions | Moscow Aviation Institute, Humboldt-Universität zu Berlin |
| Citations | 4 |
Abstract
Section titled “Abstract”High-excited discrete states of boron hydrogenlike acceptors in crystalline diamond have been measured by \ntemperature-dependent infrared absorption spectroscopy. We distinguish the boron resonant states in diamond \ncrystals from the localized boron states in the band gap by differentiating the impurity transitions within state \ncontinua of the valence light- and heavy-hole subbands on the basis of their relative oscillator strengths, specific \nselection rules, and temperature dependences. Constraints on the boron binding energy and spin-orbit splitting of \nthe valence band have been derived by analysis of the structure of the infrared absorption spectra of boron-doped \ndiamond, in particular by a comparison with boron spectra in other semiconductors with a diamond lattice
Tech Support
Section titled “Tech Support”Original Source
Section titled “Original Source”References
Section titled “References”- 2010 - Optical Absorption of Impurities and Defects in Semiconducting Crystals: I. Hydrogen-like Centres [Crossref]