Ultra-Hard (41 GPa) Isotopic Pure 10BP Semiconductor Microwires for Flexible Photodetection and Pressure Sensing
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2022-02-17 |
| Journal | ACS Nano |
| Authors | Xuefang Lu, Richeng Lin, Yuqiang Li, Ying Ding, Yali Liang |
| Institutions | Sun Yat-sen University |
| Citations | 9 |
Abstract
Section titled āAbstractāAn urgent demand for electronic and optoelectronic devices able to work in extreme environments promotes a series of research studies on semiconductor materials. Cubic boron phosphide (BP) as a semiconductor material with excellent characteristics shows great application potential. However, since the synthesis conditions required are difficult to achieve and the growth mechanism of BP is still unclear, there are few reports on the basic properties of BP and pure isotope BP, resulting in a narrow understanding of their special physical properties. Here, we successfully obtained highly pure isotopic <sup>10</sup>BP crystals by a vapor-liquid-solid (VLS) method unconventionally designed, which successfully overcomes the thermodynamic conflict between the high melting point of the boron element and low sublimation temperature of the phosphorus element. The <sup>10</sup>BP achieved owns an aspect ratio as high as 10<sup>4</sup> and a hardness up to 41 GPa. Besides, as an indirect bandgap semiconductor, it has ultrawide red emission spectra, a p-type conductivity with extremely low resistivity, and excellent photoelectronic and piezoelectric characteristics. Furthermore, compared with other superhard semiconductors like cubic BN and diamond, <sup>10</sup>BP has an obvious advantage of lower growth temperature (1200 Ā°C). All these characteristics confirm the prospects owned by <sup>10</sup>BP in its applications to the field of high-conductivity, optoelectronic, strain-sensing, and superhard semiconductors.