Current Paths in an Atomic Precision Advanced Manufactured Device Imaged by Nitrogen Vacancy Diamond Magnetic Microscopy.
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2022-03-01 |
| Authors | Luca Basso, Pauli Kehayias, Jacob Henshaw, Heejun Byeon, Maziar Saleh Ziabari |
| Citations | 1 |
Abstract
Section titled āAbstractāused nitrogen-vacancy (NV) centers in diamond for wide-field magnetic imaging (with a few-mm field of view and micron-scale resolution) of magnetic fields from surface currents flowing in an APAM test device made of a P delta-doped layer on a Si substrate, a standard APAM witness material. We integrated a diamond having a surface NV ensemble with the device (patterned in two parallel mm-sized ribbons), then mapped the magnetic field from the DC current injected in the APAM device in a home-built NV wide-field microscope. The 2D magnetic field maps were used to reconstruct the surface current densities, allowing us to obtain information on current paths, device failures such as choke points where current flow is impeded, and current leakages outside the APAM-defined P-doped regions. Analysis on the current density reconstructed map showed a projected sensitivity of ~0.03 A m-1, corresponding to a smallest-detectable current in the 200 Ī¼m wide APAM ribbon of ~6 Ī¼A. These results demonstrate the failure analysis capability of NV wide-field magnetometry for APAM materials, opening the possibility to investigate other cutting-edge microelectronic devices.