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6CCVD Research

Selectively buried growth of heavily B doped diamond layers with step-free surfaces in N doped diamond (1 1 1) by homoepitaxial lateral growth

At a Glance

Section titled ā€œAt a Glanceā€
MetadataDetails
Publication Date2022-04-08
JournalApplied Surface Science
AuthorsK. Kobayashi, Xufang Zhang, Toshiharu Makino, Tsubasa Matsumoto, Takao Inokuma
InstitutionsNational Institute of Advanced Industrial Science and Technology, Kanazawa University
Citations8

Abstract

Section titled ā€œAbstractā€

In this work, we proposed a novel method to form a buried heavily boron (B) doped p+-structure with a step-free diamond surface in nitrogen doped diamond (1 1 1) based on homoepitaxial lateral growth technique. The buried structure with a size of 10 Āµm Ɨ 10 Āµm Ɨ 0.085 Āµm was fabricated by inductively coupled plasma (ICP) etching of the mesa structure and subsequent heavy B-doping, with a boron to carbon (B/C) ratio of 15,000 ppm in the microwave-plasma-assisted chemical vapor deposition (MPCVD). The surface morphology of the buried area and its surrounding were observed by laser microscopy (LM) and atomic force microscopy (AFM), which showed atomically flat surfaces before and even after B doping. Surface potential difference measurements on both areas were applied using Kelvin-probe force microscopy (KFM). The intensity imaging of B concentration in and around the buried areas were measured by dynamic secondary ion mass spectrometry (SIMS), which confirmed the heavy B doping of the buried structure and the depth profile shows that B doping is uniform, with a concentration of 2 Ɨ 1020 atoms/cm3.

Tech Support

Section titled ā€œTech Supportā€

Original Source

Section titled ā€œOriginal Sourceā€

References

Section titled ā€œReferencesā€
  1. 2013 - Fabrication of bipolar junction transistor on (001)-oriented diamond by utilizing phosphorus-doped n-type diamond base [Crossref]
  2. 2012 - Diamond bipolar junction transistor device with phosphorus-doped diamond base layer [Crossref]
  3. 2013 - Normally-off HfO2-gated diamond field effect transistors [Crossref]
  4. 2005 - RF Diamond Transistors: Current Status and Future Prospects [Crossref]
  5. 2012 - Diamond Junction Field-Effect Transistors with Selectively Grown n +-Side Gates [Crossref]
  6. 2014 - Diamond Metal-Semiconductor Field-Effect Transistor With Breakdown Voltage Over 1.5 kV [Crossref]
  7. 2010 - High-Performance P-Channel Diamond Metal-Oxide-Semiconductor Field-Effect Transistors on H-Terminated (111) Surface [Crossref]
  8. 2016 - Design and fabrication of high-performance diamond triple-gate field-effect transistors [Crossref]
  9. 2017 - Durability-enhanced two-dimensional hole gas of C-H diamond surface for complementary power inverter applications [Crossref]
  10. 2016 - Inversion channel diamond metaloxide-semiconductor field-effect transistor with normally off characteristics [Crossref]

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