300 mA/mm Drain Current Density P-Type Enhancement-Mode Oxidized Si-terminated (111) Diamond MOSFETs with ALD Al2O3Gate Insulator
At a Glance
Section titled “At a Glance”| Metadata | Details |
|---|---|
| Publication Date | 2022-05-22 |
| Authors | Yu Fu, Yuhao Chang, Xiaohua Zhu, Atsushi Hiraiwa, Ruimin Xu |
| Institutions | University of Electronic Science and Technology of China, Waseda University |
| Citations | 2 |
Abstract
Section titled “Abstract”In this study, high-performance normally-off oxidized Si-terminated (C-Si) diamond metal-oxide- semiconductor field-effect transistors (MOSFETs) have been achieved using (111) diamond and Al <inf xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”>2</inf> O <inf xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”>3</inf> gate insulator with maximum drain current density (ID_MAX) up to 300 mA/mm, which is a record value among Enhancement-mode single crystalline diamond devices to date. During selective growth of heavily-boron-doped (p <sup xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”>++</sup> )-diamond MOSFETs utilizing a SiO <inf xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”>2</inf> mask, carbon-silicon bonding was established at SiO <inf xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”>2</inf> /diamond interface. C-Si diamond MOSFET will be a promising candidate for fulfilling the requirements of high output capability and safety operation in some power device applications.
Tech Support
Section titled “Tech Support”Original Source
Section titled “Original Source”References
Section titled “References”- 2021 - High-mobility p-channel wide-bandgap transistors based on hydrogen-terminated diamond/hexagonal boron nitride heterostructures [Crossref]