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3326-V Modulation-Doped Diamond MOSFETs

MetadataDetails
Publication Date2022-06-08
JournalIEEE Electron Device Letters
AuthorsNiloy Chandra Saha, Seong‐Woo Kim, Toshiyuki Oishi, Makoto Kasu
InstitutionsSaga University
Citations16

This letter reports the fabrication and characterization of 3.3-kV modulation-doped diamond metal-oxide-semiconductor field-effect transistors (MOSFETs). The modulation doping was performed via NO <sub xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”&gt;2&lt;/sub> delta doping in the Al <sub xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”&gt;2&lt;/sub> O <sub xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”&gt;3&lt;/sub> gate layer. The modulation-doped diamond MOSFET with a gate length of <inline-formula xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”> <tex-math notation=“LaTeX”>$2.8~\mu \text{m}$ </tex-math></inline-formula> showed a maximum drain current density of 0.42 A/mm, with an estimated specific ON-resistance of <inline-formula xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”> <tex-math notation=“LaTeX”>${13.48}~\text {m}\Omega \cdot \text {cm}^{{2}}$ </tex-math></inline-formula> . Therefore, the Baliga’s figure-of-merit (BFOM) was determined to be 820.6 MW/cm <sup xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”&gt;2&lt;/sup> . A subthreshold swing of 109.89 mV/dec, indicative of a high-quality Al <sub xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”&gt;2&lt;/sub> O <sub xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”&gt;3&lt;/sub> /diamond interface with an interfacial state density of <inline-formula xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”> <tex-math notation=“LaTeX”>${1.49} \times {10}^{{12}}$ </tex-math></inline-formula> cm <sup xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”&gt;−2&lt;/sup> eV <sup xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”&gt;−1&lt;/sup> , was obtained. The maximum effective mobility was estimated to be 496 cm <sup xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”&gt;2&lt;/sup> /Vs near the threshold, and a maximum output power density of 46.5 W/mm was projected.