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The effect of boron concentration on the electrical, morphological and optical properties of boron-doped nanocrystalline diamond sheets - Tuning the diamond-on-graphene vertical junction

At a Glance

Section titled ā€œAt a Glanceā€
MetadataDetails
Publication Date2022-07-09
JournalDiamond and Related Materials
AuthorsMichał Rycewicz, Adrian Nosek, Dong Hoon Shin, Mateusz Ficek, Josephus G. Buijnsters
InstitutionsUniversity of California, Riverside, Delft University of Technology
Citations15

Abstract

Section titled ā€œAbstractā€

<p>In this paper, the effect of boron doping on the electrical, morphological and structural properties of free-standing nanocrystalline diamond sheets (thickness ~ 1 Ī¼m) was investigated. For this purpose, we used diamond films delaminated from a mirror-polished tantalum substrate following a microwave plasma-assisted chemical vapor deposition process, each grown with a different [B]/[C] ratio (up to 20,000 ppm) in the gas phase. The developed boron-doped diamond (BDD) films are a promising semiconducting material for sensing and high-power electronic devices due to band gap engineering and thermal management feasibility. The increased boron concentration in the gas phase induces a decrease in the average grain size, consequently resulting in lower surface roughness. The BDD sheets grown with [B]/[C] of 20,000 ppm reveal the metallic conductivity while the lower doped samples show p-type semiconductor character. The charge transport at room temperature is dominated by the thermally activated nearest-neighbor hopping between boron acceptors through impurity band conduction. At low temperatures (<300 K), the Arrhenius plot shows a non-linear temperature dependence of the logarithmic conductance pointing towards a crossover towards variable range hopping. The activation energy at high temperatures obtained for lowly-doped sheets is smaller than for nanocrystalline diamond bonded to silicon, while for highly-doped material it is similar. Developed sheets were utilized to fabricate two types of diamond-on-graphene heterojunctions, where boron doping is the key factor for tuning the shape of the current-voltage characteristics. The graphene heterojunction with the low boron concentration diamond sheet resembles a Schottky junction behavior, while an almost Ohmic contact response is recorded with the highly doped BDD sheet of metallic conductivity. The free-standing diamond sheets allow for integration with temperature-sensitive interfaces (i.e. 2D materials or polymers) and pave the way towards flexible electronics devices.</p>

Tech Support

Section titled ā€œTech Supportā€

Original Source

Section titled ā€œOriginal Sourceā€

References

Section titled ā€œReferencesā€
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  6. 2016 - Single crystal diamond needle as point electron source [Crossref]
  7. 1999 - Doping of diamond [Crossref]
  8. 2021 - Influence of B/N co-doping on electrical and photoluminescence properties of CVD grown homoepitaxial diamond films [Crossref]
  9. 2002 - n-Type doping of diamond by sulfur and phosphorus [Crossref]
  10. 2019 - A ten-qubit solid-state spin register with quantum memory up to one minute

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