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6CCVD Research

A Novel Ga 2 O 3 Superjunction LDMOS Using P-Type Diamond with Improved Performance

At a Glance

Section titled ā€œAt a Glanceā€
MetadataDetails
Publication Date2022-10-01
JournalECS Journal of Solid State Science and Technology
AuthorsMoufu Kong, Jiacheng Gao, Zeyu Cheng, Zewei Hu, Bingke Zhang
InstitutionsUniversity of Electronic Science and Technology of China, National Engineering Research Center of Electromagnetic Radiation Control Materials
Citations8

Abstract

Section titled ā€œAbstractā€

Gallium oxide (Ga 2 O 3 ) has drawn remarkable attention for next generation power electronics applications. However, the development of Ga 2 O 3 power devices is seriously restricted due to its inefficient p-type dopants and low thermal conductivity. In this article, a novel Ga 2 O 3 superjunction (SJ) LDMOS (laterally-diffused metal-oxide semiconductor) device with introduction of a p-type diamond layer in the drift region is proposed and numerical investigated. The drift region of the proposed Ga 2 O 3 device consists of n-type Ga 2 O 3 , Al 2 O 3 and p-type diamond, which is not only increases the breakdown voltage (BV) and reduces the specific on-resistance ( R on,sp ), but also improves thermal performance of the device. The simulation results show that the BV and R on,sp of the proposed device are 23.22 mĪ©Ā·cm 2 and 7000 V, which are improved by more than 82.3% and 133% compared with those the conventional gate-connected filed-plate Ga 2 O 3 lDMOS with a R on,sp of 131.43 mĪ©Ā·cm 2 and a BV of 3000 V, respectively. Moreover, the thermal performance of the proposed Ga 2 O 3 SJ LDMOS is also improved dramatically, although the power density of the proposed device is about 5.7 times higher than that of the conventional device.

Tech Support

Section titled ā€œTech Supportā€

Original Source

Section titled ā€œOriginal Sourceā€

References

Section titled ā€œReferencesā€
  1. 2021 - Progress in state-of-the-art technologies of Ga2O3 devices [Crossref]
  2. 2021 - Reduction of MOS interfacial states between Ī²-Ga2O3 and Al2O3 insulator by self-reaction etching with Ga flux [Crossref]
  3. 2021 - Temperature-dependent current dispersion study in Ī²-Gaā‚‚Oā‚ƒ FETs using submicrosecond pulsed I-V characteristics [Crossref]
  4. 2021 - 130 mAĀ·mmāˆ’1 Ī²-Ga2O3 metal semiconductor field effect transistor with low-temperature metalorganic vapor phase epitaxy-regrown ohmic contacts [Crossref]
  5. 2017 - Ī²-Ga2O3 MOSFETs for radio frequency operation [Crossref]
  6. 2019 - Simulation study of reduced self-heating in Ī²-Ga2O3 MOSFET on a nano-crystalline diamond substrate [Crossref]
  7. 2013 - Ga2O3 schottky barrier diodes fabricated by using single-crystal Ga2O3 (010) substrates [Crossref]
  8. 2018 - Field-plated lateral Ī²-Ga2O3 schottky barrier diode with high reverse blocking voltage of more than 3 kV and high DC power figure-of-merit of 500 MW/cm2 [Crossref]
  9. 2022 - 6 kV/3.4 mĻ‰āˆ™cm2 Vertical Ī²-Ga2O3 schottky barrier diode with BV2/Ron,sp performance exceeding 1-D unipolar limit of GaN and SiC [Crossref]
  10. 2022 - Ultra-wide bandgap semiconductor Ga2O3 power diodes [Crossref]

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