High-Temperature Deep Ultraviolet Photodetector Based on a Crystalline Ga₂O₃-Diamond Heterostructure
At a Glance
Section titled “At a Glance”| Metadata | Details |
|---|---|
| Publication Date | 2022-10-14 |
| Journal | IEEE Electron Device Letters |
| Authors | Wei Wang, Qilong Yuan, Dongyang Han, Jie Sun, Ningtao Liu |
| Institutions | Ningbo University, Ningbo Institute of Industrial Technology |
| Citations | 35 |
Abstract
Section titled “Abstract”We report the fabrication of a crystalline <inline-formula xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”> <tex-math notation=“LaTeX”>$\varepsilon $ </tex-math></inline-formula> -Ga2O3 epilayer on a diamond substrate as deep ultraviolet photodetectors for high-temperature operation. Despite their large lattice mismatch, we achieve high quality growth of <inline-formula xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”> <tex-math notation=“LaTeX”>$\varepsilon $ </tex-math></inline-formula> -Ga2O3 films on diamond that exhibit a single out-of-plane orientation. A metal-semiconductor-metal photodetector is fabricated based on the crystalline <inline-formula xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”> <tex-math notation=“LaTeX”>$\varepsilon $ </tex-math></inline-formula> -Ga2O3/diamond heterostructure, which exhibits a high photo-to-dark current ratio of <inline-formula xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”> <tex-math notation=“LaTeX”>${3.67}\times {10}^{{6}}$ </tex-math></inline-formula> under 254 nm light illumination at the bias of 20 V, a UV/visible rejection ratio of 259, and fast rise (decay) time of 0.323 (0.171) s at room temperature. Furthermore, thanks to the high crystalline film quality, the device responsivity decreases by only 2/3, and the rise (decay) time is 0.325 (0.539) s when the photodetector is operated up to a high temperature of 473 K. This study explores an effective heterostructure design for the application of deep ultraviolet photodetectors at high temperatures.
Tech Support
Section titled “Tech Support”Original Source
Section titled “Original Source”References
Section titled “References”- 2022 - High-performance harsh-environment-resistant GaOx solar-blind photodetectors via defect and doping engineering