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6CCVD Research

Ultratough single crystal boron-doped diamond

At a Glance

Section titled “At a Glance”
MetadataDetails
Publication Date2023-01-23
JournalOSTI OAI (U.S. Department of Energy Office of Scientific and Technical Information)
AuthorsRussell J. Hemley, Ho‐kwang Mao, Chih‐shiue Yan, Qi Liang
InstitutionsCarnegie Institution for Science

Abstract

Section titled “Abstract”

The invention relates to a single crystal boron doped CVD diamond that has a toughness of at least about 22 MPa m.sup.1/2. The invention further relates to a method of manufacturing single crystal boron doped CVD diamond. The growth rate of the diamond can be from about 20-100 .mu.m/h.

Tech Support

Section titled “Tech Support”

Original Source

Section titled “Original Source”

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