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Compact localized boundary states in a quasi-1D electronic diamond-necklace chain

MetadataDetails
Publication Date2023-02-28
JournalQuantum Frontiers
AuthorsS. N. Kempkes, Pierre Capiod, S. Ismaili, J. Mulkens, L. Eek
InstitutionsUtrecht University
Citations12
AnalysisFull AI Review Included
  • Core Innovation: Experimental realization of robust, zero-energy Compact Localized Boundary States (CLBS) in a quasi-1D electronic diamond-necklace chain.
  • Key Advantage over Existing Qubits: Unlike traditional topological zero-modes (e.g., Majorana states) which decay exponentially into the bulk, CLBS exhibit zero decay (perfect localization), eliminating the critical problem of end-mode hybridization in short chains.
  • Protection Mechanism: The robustness of the CLBS is attributed to a newly identified “latent symmetry” within the lattice structure, protecting the modes against bulk disorder and many local perturbations.
  • Experimental Platform: The system was realized using an electronic quantum simulator platform: CO molecules precisely positioned on a Cu(111) surface, measured via low-temperature Scanning Tunneling Microscopy (STM) at 4 K.
  • Tunability: The amplitude of the localized wave function at the boundary sites can be precisely controlled and tuned by adjusting the boundary hopping parameter (t3) via atomic manipulation of the CO molecules.
  • Theoretical Verification: The experimental Local Density of States (LDOS) maps and spectra were successfully verified using both tight-binding calculations and muffin-tin simulations.
ParameterValueUnitContext
Operating Temperature4KScanning Tunneling Microscopy (STM) environment.
Substrate MaterialCu(111)N/AHost for the 2D surface electron gas.
Artificial Atom Barrier Height (V)0.9eVPotential barrier created by CO molecules (Muffin-tin simulation).
Artificial Atom Radius (R)0.3nmRadius of the circular potential barriers (CO molecules).
Strong Hopping (t1)0.095eVStrong hopping amplitude within a diamond unit.
Weak Hopping Ratio (t2/t1)0.1N/AHopping ratio used to open the bulk band gap.
Diamond Connecting Hopping (t4)0.4t1N/AHopping connecting adjacent diamond units.
Boundary Hopping Range (t3)0.3t1 to 0.8t1N/ARange used to tune the CLBS wave function amplitude.
Onsite Energy (epsilon)-0.1VEnergy of the localized zero-mode peak in the LDOS.
Tight-Binding Broadening (Gamma)80meVLorentzian broadening applied to theoretical spectra.
Lock-in Modulation (Vrms)10mVUsed for differential conductance (dI/dV) measurement.
Lock-in Frequency769HzUsed for differential conductance (dI/dV) measurement.
  1. Electronic Quantum Simulation Setup: The quasi-1D diamond-necklace chain was constructed on a Cu(111) surface using CO molecules as repulsive scatterers. The CO molecules were individually positioned using the tip of a low-temperature STM (LT-STM) operating at 4 K.
  2. Lattice Geometry Control: The hopping parameters (t1, t2, t4) were set by the fixed lattice geometry, while the critical boundary hopping (t3) was tuned by adjusting the distance of specific CO molecules at the chain ends (ranging from 1.28 nm for strong coupling to 1.024 nm for weak coupling).
  3. Spectroscopic Analysis (STS): Local Density of States (LDOS) spectra were acquired via Scanning Tunneling Spectroscopy (STS) at constant height. The differential conductance (dI/dV) was measured using a lock-in amplifier with a 10 mV root mean square (rms) modulation.
  4. Wave Function Mapping: Spatial maps of the LDOS were generated by disabling the feedback loop and activating external voltage modulation, allowing visualization of the compact localization of the zero-energy modes at the chain boundaries.
  5. Computational Verification: Experimental data were validated using two distinct theoretical models:
    • Tight-Binding (TB) Model: A finite-size Hamiltonian was solved, incorporating four hopping parameters (t1-t4) and Lorentzian broadening (80 meV).
    • Muffin-Tin (MT) Model: The Schrödinger equation was numerically solved for a 2D electron gas patterned by circular potential barriers (V = 0.9 eV, R = 0.3 nm), simulating the effect of the CO molecules.
  • Fault-Tolerant Quantum Computing: The CLBS provide robust, non-hybridizing zero-energy modes suitable for use as topological qubits. Their compact localization removes the requirement for extremely long chains (L >> coherence length), simplifying device fabrication and improving operational stability.
  • Quantum Information Transfer and Storage: CLBS are proposed as ideal elements for quantum networks, enabling the transfer and storage of information due to their inherent protection against local disorder and their non-decaying nature.
  • Topological Electronics and Devices: The demonstrated robustness against perturbations makes this lattice design valuable for creating stable electronic components where boundary effects are crucial, such as topological transistors or switches.
  • Designer Quantum Materials Research: The STM-based electronic quantum simulator platform is a powerful tool for rapid prototyping and characterization of novel flat-band systems and topological phases, accelerating the discovery of new quantum materials.
  • Advanced Sensor Technology: The ability to precisely control the wave function amplitude via boundary coupling could be leveraged in highly sensitive quantum sensors where localized, protected states are required.