Fast Switching NO₂-Doped p-Channel Diamond MOSFETs
At a Glance
Section titled “At a Glance”| Metadata | Details |
|---|---|
| Publication Date | 2023-03-24 |
| Journal | IEEE Electron Device Letters |
| Authors | Niloy Chandra Saha, Tomoki Shiratsuchi, Seong‐Woo Kim, Koji Koyama, Toshiyuki Oishi |
| Institutions | Saga University, Arkray (Japan) |
| Citations | 7 |
Abstract
Section titled “Abstract”This letter demonstrates the fast-switching characteristics of a normally-on NO2 p-type doped diamond metal-oxide-semiconductor field-effect transistor (MOSFET). A very fast-switching operation was realized for a diamond MOSFET with a turn-on ( <inline-formula xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”> <tex-math notation=“LaTeX”>$\text{t}{\text {on}}{)}$ </tex-math></inline-formula> and turn-off ( <inline-formula xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”> <tex-math notation=“LaTeX”>$\text{t}{\text {off}}{)}$ </tex-math></inline-formula> time of as low as 9.97 and 9.63 ns, respectively. The parasitic parameters that influence the switching time and switching loss were measured as input capacitance, <inline-formula xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”> <tex-math notation=“LaTeX”>$\text{C}{\text {iss}}$ </tex-math></inline-formula> of 245 nF/mm, output capacitance, <inline-formula xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”> <tex-math notation=“LaTeX”>$\text{C}{\text {oss}}$ </tex-math></inline-formula> of 732 pF/mm, and reverse capacitance, <inline-formula xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”> <tex-math notation=“LaTeX”>$\text{C}_{\text {rss}}$ </tex-math></inline-formula> of 17 pF/mm. A total switching energy loss was determined to be only 208 pJ. This report suggests the potential of NO2-doped diamond MOSFETs for prospective high-speed switching applications.