Neutral Silicon Vacancy Centers in Undoped Diamond via Surface Control
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2023-04-21 |
| Journal | Physical Review Letters |
| Authors | Zi-Huai Zhang, Josh A. Zuber, Lila V. H. Rodgers, Xin Gui, Paul Stevenson |
| Institutions | Swiss Nanoscience Institute, Northeastern University |
| Citations | 27 |
Abstract
Section titled āAbstractāNeutral silicon vacancy centers (SiV^{0}) in diamond are promising candidates for quantum applications; however, stabilizing SiV^{0} requires high-purity, boron-doped diamond, which is not a readily available material. Here, we demonstrate an alternative approach via chemical control of the diamond surface. We use low-damage chemical processing and annealing in a hydrogen environment to realize reversible and highly stable charge state tuning in undoped diamond. The resulting SiV^{0} centers display optically detected magnetic resonance and bulklike optical properties. Controlling the charge state tuning via surface termination offers a route for scalable technologies based on SiV^{0} centers, as well as charge state engineering of other defects.