High breakdown electric field diamond Schottky barrier diode with HfO2 field plate
At a Glance
Section titled “At a Glance”| Metadata | Details |
|---|---|
| Publication Date | 2023-05-15 |
| Journal | Applied Physics Letters |
| Authors | Qi Li, Shumiao Zhang, Guoqing Shao, Juan Wang, Ruozheng Wang |
| Institutions | Xi’an Jiaotong University |
| Citations | 18 |
Abstract
Section titled “Abstract”In this work, we fabricated a vertical diamond Schottky barrier diode (SBD) with a high breakdown electric field of 4.8 MV/cm and a forward current density of 2361 A/cm2. Compared with a regular diamond SBD, the breakdown electric field of SBD with a HfO2 field plate (FP) increased from 183 to 302 V, the current swing (ION/IOFF) was on the order of 1011. As the thickness of the HfO2 FP increased from 200 to 400 nm, the breakdown voltage of the SBD increased from 280 to 314 V, and the corresponding breakdown electric field increased from 4.5 to 5 MV/cm. We also measured the current-voltage characteristics at different temperatures to investigate the cause of the high on-resistance. As the measured temperature increased from 25 to 150 °C, the on-resistance of the device decreased from 4.7 to 1.7 mΩ·cm2. By studying the interface between HfO2 and the diamond, we found that HfO2 can reduce the interface state density of the Schottky contact. The interface state density of Zr/HfO2/diamond was lower than 1.5 × 1013 eV−1·cm−2. This work provides a simple strategy for realizing high-performance diamond SBDs.
Tech Support
Section titled “Tech Support”Original Source
Section titled “Original Source”References
Section titled “References”- 2017 - Smart power devices and ICs using GaAs and wide and extreme bandgap semiconductors [Crossref]
- 1995 - G. Davies, ed. Properties and Growth of Diamond. London (The Institution of Electrical Engineers), 1994. 438 pp. xvi+, Price£135.00. ISBN 0 85296 875 2 [Crossref]
- 2003 - Exceptionally high voltage Schottky diamond diodes and low boron doping [Crossref]
- 2008 - Electron mobility in phosphorous doped {111} homoepitaxial diamond [Crossref]
- 2020 - Diamond power devices: State of the art, modelling, figures of merit and future perspective [Crossref]
- 2021 - Diamond for electronics: Materials, processing and devices [Crossref]
- 2018 - Recent advances in diamond power semiconductor devices [Crossref]
- 2019 - Diamond Schottky barrier diodes with floating metal rings for high breakdown voltage [Crossref]
- 2008 - Edge termination techniques for p-type diamond Schottky barrier diodes [Crossref]
- 2022 - Design of vertical diamond Schottky barrier diode with a novel beveled junction termination extension [Crossref]