The 36th International Symposium on Power Semiconductor Devices and ICs
At a Glance
Section titled “At a Glance”| Metadata | Details |
|---|---|
| Publication Date | 2023-05-28 |
| Authors | |
| Analysis | Full AI Review Included |
Executive Summary
Section titled “Executive Summary”- Event Focus: The 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD 2024), serving as the premier technical forum for power electronics.
- Scope: Comprehensive coverage of power semiconductor devices and power integrated circuits (ICs), ranging from low voltage (LVT, ≤ 200 V) to high voltage (HV, > 200 V) applications.
- Wide Bandgap (WBG) Emphasis: Significant focus on advanced materials, including Silicon Carbide (SiC), Gallium Nitride (GaN), III/V compounds (e.g., AlN, GaAs), and emerging materials like Gallium Oxide (Ga2O3) and diamond.
- Design and Integration: Tracks dedicated to Power IC Design (ICD) and Module and Package Technologies (PK) for complete system integration.
- Location/Date: Held in Bremen, Germany (Die Glocke), from June 2 to 6, 2024.
- Submission Deadline: Abstract submission deadline is December 4, 2023.
Technical Specifications
Section titled “Technical Specifications”| Parameter | Value | Unit | Context |
|---|---|---|---|
| Event Date Range | 2 - 6 | June 2024 | Symposium duration |
| High Voltage Threshold | > 200 | V | Definition for HV Power Devices track |
| Low Voltage Threshold | ≤ 200 | V | Definition for LVT Power Devices track |
| Abstract Submission Deadline | December 4 | 2023 | Initial submission cutoff |
| Author Notification Date | February 5 | 2024 | Date authors are informed of acceptance |
| Late News Submission Deadline | March 8 | 2024 | Limited acceptance window |
| Final Manuscript Submission | March 22 | 2024 | Deadline for full paper submission |
| Abstract Text Summary Max | 500 | words | Maximum length for the single-page text summary |
| Supporting Figures Max | 2 | pages | Maximum additional pages allowed for figures |
Key Methodologies (Conference Tracks)
Section titled “Key Methodologies (Conference Tracks)”The symposium is structured around six primary technical tracks, defining the scope of accepted research:
- High Voltage Power Devices (HV):
- Focus: High voltage silicon-based discrete devices (> 200 V).
- Examples: Super junction MOSFETs, IGBTs, thyristors, GTOs, and pn-diodes.
- Low Voltage Power Devices and Power IC Technology (LVT):
- Focus: Low voltage silicon-based discrete power devices (≤ 200 V) and power devices for Power ICs across all voltage ranges.
- Power IC Design (ICD):
- Focus: Circuit design and demonstration utilizing the power IC technology platform.
- GaN and III/V Compound Materials (GaN):
- Focus: GaN and other III/V compound material (e.g., AlN, GaAs) based power devices.
- Scope: Technology, integration, materials science, and processing techniques.
- SiC and Other Materials (SiC):
- Focus: SiC and other emerging materials (e.g., Ga2O3, diamond) based power devices.
- Scope: Technology, integration, materials science, and processing techniques.
- Module and Package Technologies (PK):
- Focus: Package technology specifically designed for modules, discrete power devices, and power ICs.
Commercial Applications (Device and Material Focus)
Section titled “Commercial Applications (Device and Material Focus)”The technologies discussed at ISPSD 2024 are foundational to high-efficiency power conversion across numerous industries.
| Material System / Device Type | Application Context | Key Device Examples |
|---|---|---|
| High Voltage Silicon (HV) | Industrial power conversion, grid infrastructure, high-power motor drives. | IGBTs, Super Junction MOSFETs, Thyristors, GTOs. |
| Low Voltage Silicon (LVT) | Consumer electronics, automotive low-voltage systems, battery management. | Discrete power devices (≤ 200 V), Power ICs. |
| Silicon Carbide (SiC) | Electric vehicles (EVs), fast charging infrastructure, renewable energy inverters. | SiC MOSFETs, SiC Diodes. |
| Gallium Nitride (GaN) | High-frequency power supplies, RF applications, compact power adapters. | GaN HEMTs, GaN-based power devices. |
| Emerging WBG Materials | Extreme environment electronics, ultra-high power density systems. | Ga2O3, Diamond-based devices. |
| Power IC Design (ICD) | System-on-Chip solutions, integrated power management, smart power modules. | Integrated circuits utilizing power technology platforms. |
| Packaging (PK) | Reliability, thermal management, high-density power modules. | Advanced packaging for discrete devices and power ICs. |
View Original Abstract
ISPSD is the premier forum for technical discussion in all areas of power semiconductor devices and power integrated circuits.ISPSD 2024 will be held in the concert hall ‘Die Glocke’ in the Free Hanseatic City of Bremen, the cosmopolitan town on the river Weser, home of the famous Bremen Town Musicians, full of history with a UNESCO World Heritage site and a European centre of aeronautics and space industry. CONFERENCE TRACKS HighVoltage Power Devices (HV): High voltage silicon based discrete devices (> 200 V) such as super junction MOSFETs, IGBTs, thyristors, GTOs and pn-diodes Low Voltage Power Devices and Power IC Technology (LVT): Low voltage silicon based discrete power devices (≤ 200 V) and power devices for power ICs of all voltage ranges Power IC Design (ICD): Circuit design and demonstration using power IC technology platform GaN and III/V Compound Materials (GaN): GaN and other III/V compound material (e.g.AlN, GaAs) based power devices, technology and integration, materials, and processing SiC and Other Materials (SiC): SiC and other material (e.g.Ga 2 O 3 , diamond) based power devices, technology and integration, materials, and processing Module and Package Technologies (PK): Package technology for modules, discrete power devices and power ICs