The Application Status of the Third Generation of Semiconductor Materials in the FIeld of Electric Power
At a Glance
Section titled âAt a Glanceâ| Metadata | Details |
|---|---|
| Publication Date | 2023-06-30 |
| Journal | Highlights in Science Engineering and Technology |
| Authors | Wenkai Zhao |
| Citations | 4 |
| Analysis | Full AI Review Included |
Executive Summary
Section titled âExecutive SummaryâThis analysis reviews the application status and material characteristics of third-generation wide bandgap (WBG) semiconductors (SiC, GaN, and Diamond) which are rapidly replacing traditional Si and GaAs in high-performance electronic systems.
- Core Value Proposition: WBG materials (2.0 eV to 6.0 eV) offer superior performance over first- and second-generation semiconductors, enabling stable operation at higher temperatures, voltages, and frequencies, while reducing power consumption.
- SiC Niche: Dominates high-power, high-voltage applications (above 1200V), specifically targeting electric vehicle (EV) power systems (especially the emerging 800V architecture), charging infrastructure, and high-power LED technology.
- GaN Niche: Excels in high-frequency applications (40V to 1200V), primarily used in consumer electronics fast chargers (55W-65W mainstream), 5G base stations, and advanced laser/detector technologies (UV, blue, green).
- Diamond Potential: Possesses the highest known thermal conductivity and breakdown electric field (3-4x SiC, 10x GaN), positioning it as the ultimate material for extreme microwave and optoelectronic devices, though industrialization faces significant technical hurdles (e.g., high-purity single crystal growth).
- Market Trend: The global GaN power semiconductor market is projected to reach 1.32 billion USD by 2025, driven largely by demand for fast charging and NEV integration.
- Strategic Importance: These materials are critical components for strategic emerging industries, including next-generation information technology, energy conservation, and national defense.
Technical Specifications
Section titled âTechnical Specificationsâ| Parameter | Value | Unit | Context |
|---|---|---|---|
| Bandgap (Si) | 1.1 | eV | First-generation semiconductor reference |
| Bandgap (GaAs) | 1.4 | eV | Second-generation semiconductor reference |
| Bandgap (WBG Range) | 2.0 to 6.0 | eV | Third-generation semiconductor definition |
| Bandgap (Diamond) | 5.5 | eV | Highest bandgap among discussed materials |
| Breakdown Field (Diamond) | 3 to 4 | Ratio | Compared to SiC |
| Breakdown Field (Diamond) | 10 | Ratio | Compared to GaN |
| Thermal Conductivity (Diamond) | 4 | Ratio | Compared to SiC |
| Thermal Conductivity (Diamond) | 15 | Ratio | Compared to GaN |
| Maximum Operating Temp (Si/GaAs) | Below 200 | °C | Limitation of first- and second-generation devices |
| SiC Application Voltage | Above 1200 | V | High-power applications (EV infrastructure) |
| GaN Application Voltage Range | 40 to 1200 | V | High-frequency applications (Consumer/5G) |
| Mainstream Fast Charging Power | 55 to 65 | W | Current market standard for GaN chargers |
| Projected GaN Market Size (2025) | 1.32 | Billion USD | Gallium Nitride power semiconductors |
| Global SiC Market Share (US Companies) | >70 | % | Held by US industry giants (Cree, II-VI, etc.) |
Key Methodologies
Section titled âKey MethodologiesâThe paper focuses primarily on the application status and material properties rather than detailed experimental recipes. However, the following key material processing methodologies are referenced for the development of third-generation devices:
- Substrate and Epitaxial Development: Continuous effort is noted in increasing the diameter size and improving the quality of both the substrate and the epitaxial layers for SiC and GaN to enhance device performance and reduce costs.
- SiC Substrate Utilization: SiC is used as a conductive substrate for GaN-based materials. Its small lattice mismatch helps improve the quality of the GaN epitaxial layer, facilitating the preparation of vertically structured light-emitting devices.
- Diamond Thin Film Growth (Two Pathways):
- Homogeneous Epitaxy: Growing doped diamond single crystal film, typically requiring high-purity gold diamond single crystal film preparation.
- Heterogeneous Epitaxy: Growing diamond semiconductor polycrystalline film on a non-diamond substrate (e.g., cubic boron nitride), which is technically challenging due to difficulties in preparing high-quality cubic boron nitride.
- Device Packaging and Design: Significant ongoing research is required in the design, production, and packaging technology of diamond semiconductor devices to overcome current economic and technical problems.
Commercial Applications
Section titled âCommercial ApplicationsâThe third generation of semiconductor materials is driving innovation across several high-growth sectors, leveraging their superior thermal, voltage, and frequency characteristics.
| Material | Primary Application Field | Specific Products/Industries |
|---|---|---|
| Silicon Carbide (SiC) | High-Power Electronics & Energy Conversion | Electric Vehicles (EVs) (especially 800V systems), EV charging infrastructure, Smart Grids, Solar Energy, Offshore Wind Power, Uninterruptible Power Supplies (UPS), High-speed rail transit, LED technology (high brightness/power). |
| Gallium Nitride (GaN) | High-Frequency & Consumer Electronics | Fast chargers (55W-65W), 5G communication base stations, High-frequency RF products, New Energy Vehicle fast charging, Blue/Green/UV Lasers (Laser TV, data storage), UV Detectors (high-speed flight object early warning, nuclear radiation monitoring). |
| Diamond | Extreme Environment & Optoelectronics | Microwave frequency devices, High-power microwave solid devices, Optoelectronic devices, Thermal management (heat sinking), Potential application in high-temperature, high-voltage, strong radiation environments. |
| General WBG | Strategic Emerging Industries | Next-generation information technology, Energy conservation and emission reduction, National defense and security technology. |
View Original Abstract
With the vigorous development of semiconductor materials, the third generation of semiconductors represented by SiC, GaN, and diamond have gradually become the mainstream materials of modern semiconductors, and this paper introduces the application of SiC, GaN, and diamond, respectively, and analyzes their existing properties. The advantages and disadvantages of each are drawn in more detail.