Single-crystal diamond growth by hot-filament CVD - a recent advances for doping, growth rate and defect controls
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2023-09-29 |
| Journal | Functional Diamond |
| Authors | Shinya Ohmagari |
| Institutions | National Institute of Advanced Industrial Science and Technology |
| Citations | 26 |
Abstract
Section titled āAbstractāDiamond single crystals have garnered significant attention due to their wide-ranging applications, encompassing not only semiconducting films but also potential quantum sensing materials. The hot-filament activated chemical vapor deposition (HFCVD) technique has been extensively employed to produce polycrystalline diamond films, hard coatings, boron-doped diamond electrodes, and thermal management applications, primarily due to its notable advantages in scalability (>12 inches). However, the growth of single crystals presents certain challenges, such as wire contaminations originating from heated filament materials, which are particularly concerning for electronic applications. Furthermore, low-rate growth is unfavorable for industrial implementation. Nonetheless, recent discoveries have demonstrated that intentionally-doped metal impurities can enhance the crystallinity of diamonds, resulting in highly uniform Schottky barrier diodes with low leakage currents. Moreover, by elevating the filament temperature to 3000 Ā°C, growth rates exceeding 10 Āµm/h have been successfully achieved. This study provides a concise overview of the recent advancements in hot-filament CVD growth, focusing on growth, doping, metal incorporation effects, and device performance.
Tech Support
Section titled āTech SupportāOriginal Source
Section titled āOriginal SourceāReferences
Section titled āReferencesā- 2018 - Power electronics device applications of diamond semiconductors.