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6CCVD Research

Ultra-high growth rate of boron-doped diamond films with optimized growth parameters using in-liquid microwave plasma CVD

At a Glance

Section titled ā€œAt a Glanceā€
MetadataDetails
Publication Date2023-10-24
JournalDiamond and Related Materials
AuthorsYusuke Tominaga, Y.M. Hunge, Naoaki Kubota, Naoya Ishida, Susumu Sato
InstitutionsTokyo University of Science, Saitama Institute of Technology
Citations7

Abstract

Section titled ā€œAbstractā€

In this work, boron doped diamond (BDD) films were deposited onto a silicon substrate using the in-liquid microwave plasma chemical vapor deposition (IL-MPCVD) method. During the synthesis of BDD films, the effect of solvent, pressure, power and distance between the substrate and the microwave antenna on the growth rate of BDD films was studied. Pressure varied from 20 to 80 kPa at the interval of 20 kPa, power from 500 to 600 W at the interval of 50 W and distance from 1 to 1.5 mm. These different conditions resulted in the formation of both nanocrystalline and microcrystalline BDD films. Synthesized BDD films were characterized by Raman spectroscopy, laser microscopy, and optical emission spectroscopy. The highest growth rate of 410 Ī¼m/h is obtained as compared to the previous literature. Good synthesis parameters were used to deposit large area BDD films and the surface area expanded from 7 to 35 mm2. Along with this, the electrochemical properties of BDD films were studied in two different electrolytes. Concerning the growth rate, larger redox potential difference, IL-MPCVD is an effective method than the conventional microwave plasma chemical vapor deposition (MPCVD) method for the fabrication of high growth BDD films. In this research, we synthesized BDD films with a B/C ratio of 1000 ppm by adjusting pressure, microwave power, and the substrate-to-electrode distance to determine the optimal synthesis conditions. This enabled us to determine the optimal synthesis conditions while examining variables like boron concentration and growth rate. By employing these optimized synthesis conditions, we successfully expanded the surface area of the BDD film from 7 to 35 mm2, which represents a fivefold increase. Most importantly, this is the first time reported the highest growth rate of 410 Ī¼m/h is achieved using this technique with to obtain highly crystalline BDD films. Additionally, we conducted an investigation into the electrochemical properties of BDD films in various electrolytes.

Tech Support

Section titled ā€œTech Supportā€

Original Source

Section titled ā€œOriginal Sourceā€

References

Section titled ā€œReferencesā€
  1. 2012 - Electrochemical synthesis on boron-doped diamond [Crossref]
  2. 2015 - A practical guide to using boron doped diamond in electrochemical research [Crossref]
  3. 2008 - Raman and conductivity studies of boron-doped microcrystalline diamond, facetted nanocrystalline diamond and cauliflower diamond films
  4. 2016 - Charge separation in TiO2/BDD heterojunction thin film for enhanced Photoelectrochemical performance [Crossref]
  5. 2009 - Synthesis of diamond using in-liquid plasma chemical vapor deposition [Crossref]
  6. 2003 - Fujishima Comninellis, boron doped diamond electrodes for nitrate elimination in concentrated wastewater [Crossref]
  7. 2018 - Effect of doping level on the electrochemical reduction of CO2 on boron-doped diamond electrodes [Crossref]
  8. 1990 - Rapid single crystalline diamond growth by acetylene-oxygen flame deposition [Crossref]

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