Skip to content
6CCVD Research

Influence of high fluence heavy ion irradiation on the performance of single crystal diamond detectors

At a Glance

Section titled ā€œAt a Glanceā€
MetadataDetails
Publication Date2023-11-01
JournalJournal of Instrumentation
AuthorsXiaohong Wang, Z. Li, Ran Li, Z. Lu, Chunlin Chen
InstitutionsInstitute of Modern Physics, Lanzhou Jiaotong University
Citations1

Abstract

Section titled ā€œAbstractā€

Abstract Radiation detectors based on diamond are highly favored for particle physics research due to their superior radiation hardness. In this work, the performance of single crystal diamond detectors under high fluence heavy ion radiation has been investigated. After irradiation by Fe 13+ and Xe 20+ ion beams with a high particle fluence of 1.2 Ɨ 10 15 cm -2 , the properties of unirradiated and irradiated intrinsic single crystal chemical vapor deposition (CVD) diamond detectors are compared by means of the spectroscopic energy resolution, charge collection efficiency (CCE), mobility-lifetime ( Ī¼Ļ„ ) product and time response using a 241 Am alpha ( Ī± ) particle source. The experimental results of the unirradiated sample with respect to I-V dark current levels, showed an ohmic behaviour of the Al and Cr/Au contact, CCE of 100%, fast response with a rise time of 750 ps and a fall time of 600 ps as well as drift velocities of 6.67 Ɨ 10 4 m/s and 4.72 Ɨ 10 4 m/s for holes and electrons respectively. In the case of the irradiated samples, the CCE, Ī¼Ļ„ product and time response pulse amplitude of holes and electrons were all degraded, indicating that high density trappings for both kinds of carriers were created under the diamond crystal surface and the trapping probability of holes and electrons was equal, which was different from the previous reports in the literature where only higher trapping probability of holes were observed under heavy ions irradiation. In particular, the spectroscopic performance as well as Ī¼Ļ„ product of holes and electrons in Fe 13+ irradiated sample decreased more than those in Xe 20+ irradiated sample, which implied that the recombination of electrons and holes increased in Fe 13+ irradiated sample with greater penetration depth than that in Xe 20+ irradiated sample when radiation fluence was up to 10 15 cm -2 , despite the lower density of lattice vacancies in Fe 13+ irradiated sample. Moreover, the rise time of holes was slightly different, but the drift velocity was basically the same as that of the unirradiated sample, and so was that of the electrons. Anyway, the presented results showed that the diamond detectors irradiated by heavy ions at a high fluence of 10 15 cm -2 still retained their good spectroscopic and very fast time response properties.

Tech Support

Section titled ā€œTech Supportā€

Original Source

Section titled ā€œOriginal Sourceā€

References

Section titled ā€œReferencesā€
  1. 2002 - High Carrier Mobility in Single-Crystal Plasma-Deposited Diamond [Crossref]
  2. 2010 - Characterization of Monoenergetic Neutron Reference Fields with a High Resolution Diamond Detector [Crossref]
  3. 2014 - Radiation damage in single crystal CVD diamond material investigated with a high current relativistic ^197Au beam [Crossref]

Reads Similar to This

Coupling of single NV center to the tapered optical fiber Electric current paths in a Si -P delta-doped device imaged by nitrogen-vacancy diamond magnetic microscopy Surface effects on nitrogen vacancy centers neutralization in diamond