Skip to content
6CCVD Research

Temperature dependence of growth-sector-dependent Raman spectra of boron-doped diamonds synthesized at high-pressure high-temperature

At a Glance

Section titled ā€œAt a Glanceā€
MetadataDetails
Publication Date2023-11-03
JournalJournal of Physics Condensed Matter
AuthorsŠ.Š”. ŠŃ–ŠŗŠ¾Š»ŠµŠ½ŠŗŠ¾, V. V. Strelchuk, Ihor Danylenko, S. P. Starik, Š¢.Š’. ŠšŠ¾Š²Š°Š»ŠµŠ½ŠŗŠ¾
InstitutionsNational Academy of Sciences of Ukraine, V.E. Lashkaryov Institute of Semiconductor Physics
Citations3

Abstract

Section titled ā€œAbstractā€

Abstract Single crystals of boron-doped diamond (BDD) were synthesized by the temperature gradient method in high-pressure and high-temperature conditions in the Fe-Al-B-C system, and multisectoral diamond plates were extracted. Temperature-dependent (77-600 K) high-resolution Raman spectroscopic studies have been carried out to investigate the behavior of anharmonic phonon decay in the {001}, {113}, and {111} growth sectors of multisectoral diamond plates with different content of boron impurities (ā©½80 ppm) and compare with the data for undoped IIa diamond. Micro-Fourier transform infrared spectroscopy was used to estimate the spatial distribution of uncompensated boron impurity [N a -N d ] in BDD plates by analyzing boron-related absorption peaks. The plates were shown to have non-uniform growth-sector-dependent content of uncompensated boron impurity in the range from 1.1 Ɨ 10 18 to 1.4 Ɨ 10 19 cm āˆ’3 . The effects of anharmonic decay (damping) of optical phonons in BDD are studied by modeling the temperature dependence of phonon frequency and linewidth of the diamondā€™s F 2g and boron-induced vibrational modes. The extrapolated zero-temperature optical phonon linewidth and frequency and the anharmonic nature of their linear relationship are determined as a function of the growth sector and boron doping. The predominant mechanisms and parameters of the anharmonic decay of optical phonons are determined, which is of fundamental importance for the thermal conductivity of semiconductor materials. The anharmonic phonon decay remained the predominant process at higher temperatures, irrespective of the doping level.

Tech Support

Section titled ā€œTech Supportā€

Original Source

Section titled ā€œOriginal Sourceā€

References

Section titled ā€œReferencesā€
  1. 2021 - High pressure high temperature synthesis of highly boron doped diamond microparticles and porous electrodes for electrochemical applications [Crossref]
  2. 2018 - Growth of structurally perfect diamond single crystals at high pressures and temperatures. Review [Crossref]
  3. 2003 - The boron acceptor in diamond [Crossref]
  4. 2022 - Correlated Kelvin-probe force microscopy, micro-FTIR and micro-Raman analysis of doping anisotropy in multisectorial boron-doped HPHT diamonds [Crossref]
  5. 2023 - Electrostructural and morphological features of etch pits in boron-doped HPHT-diamond single crystals and multisectoral plates [Crossref]
  6. 2022 - Effects of boron doping on the bulk and surface acoustic phonons in single-crystal diamond [Crossref]
  7. 2004 - Effect of boron impurity on the Raman spectrum of synthetic diamond [Crossref]
  8. 2016 - Boron inhomogeneity of HPHT-grown single-crystal diamond substrates: confocal micro-Raman mapping investigations [Crossref]

Reads Similar to This

Boron arsenide phonon dispersion from inelastic x-ray scattering - Potential for ultrahigh thermal conductivity Efficient Thermal Analysis of Lab-Grown Diamond Heat Spreaders Laser processing and electrical analysis of embedded graphitic wires in diamond