A Systematic Study of the Factors Affecting the Surface Quality of Chemically Vapor-Deposited Diamond during Chemical and Mechanical Polishing
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2024-03-28 |
| Journal | Micromachines |
| Authors | Zewei Yuan, Zhihui Cheng, Yusen Feng |
| Institutions | Shenyang University of Technology |
| Citations | 5 |
| Analysis | Full AI Review Included |
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View Original Abstract
Diamond surfaces must be of high quality for potential use in semiconductors, optical windows, and heat conductivity applications. However, due to the materialās exceptional hardness and chemical stability, it can be difficult to obtain a smooth surface on diamond. This study examines the parameters that can potentially influence the surface quality of chemically vapor-deposited (CVD) diamonds during the chemical and mechanical polishing (CMP) process. Analysis and experimental findings show that the surface quality of polished CVD diamonds is significantly influenced by the crystal structure and the growth quality of the diamond. In particular, when the surface roughness is below Ra 20 nm, the pores and grain boundaries on CVD diamond obstruct surface roughness reduction during mechanical polishing. To obtain a smooth polished surface, careful consideration of the size of diamond abrasives and polishing methods is also a prerequisite. Chemical mechanical polishing is a novel method to achieve a surface quality with roughness below Ra 3 nm, as in this method, the anisotropy of the CVD diamond allows the uneven steps to be efficiently erased. However, the chemical actions of polishing slurry should be controlled to prevent the formation of chemical etching pits.
Tech Support
Section titled āTech SupportāOriginal Source
Section titled āOriginal SourceāReferences
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