Skip to content
6CCVD Research

Heterogenous integration of gallium oxide with diamond and SiC

At a Glance

Section titled ā€œAt a Glanceā€
MetadataDetails
Publication Date2024-03-15
AuthorsArpit Nandi, Indraneel Sanyal, Alexander Petkov, James W. Pomeroy, D. Cherns
InstitutionsUniversity of Bristol
Citations2

Abstract

Section titled ā€œAbstractā€

Gallium Oxide (Ga<sub>2</sub>O<sub>3</sub>) has attracted great attention due to its predicted high critical electric field, and consequentially its expectation to have impact for high voltage power devices. However, from a device design and reliability perspective, it has certain drawbacks: Ga<sub>2</sub>O<sub>3</sub> has a relatively low thermal conductivity, potentially causing excessively high device temperatures, accelerating device degradation; usable p-doping is unavailable, preventing the use of advanced devices designs such as superjunctions which require both n- and p-doping. It is critically important to address these limitations for Ga<sub>2</sub>O<sub>3</sub> to compete with SiC which is Ga<sub>2</sub>O<sub>3</sub>ā€˜s direct competitor, where advanced device concepts such as superjunctions are in process being explored, and prototype devices have already been realized. For Ga<sub>2</sub>O<sub>3</sub>, one possible solution is heterogeneous integration with other wide or ultra-wide bandgap materials which can be p-doped. Selecting materials with higher thermal conductivity would also address thermal management. Nickel Oxide has been explored as a p-type material and successful Gallium Oxide / Nickel Oxide high voltage proto-type devices have been demonstrated. However, Nickel Oxideā€™s has a low thermal conductivity, so enabling devices which can handle high current densities may be a challenge. Based on these criteria, diamond and SiC are primary candidates for integration with Ga<sub>2</sub>O<sub>3</sub>. We report here on integration by metal organic chemical vapor deposition (MOCVD) of Ga<sub>2</sub>O<sub>3</sub> with diamond and SiC. We also explore direct bonding as an alternative heterogenous integration method.

Tech Support

Section titled ā€œTech Supportā€

Original Source

Section titled ā€œOriginal Sourceā€

References

Section titled ā€œReferencesā€
  1. 2023 - Development of SiC Superjunction MOSFET: A Review
  2. 2023 - Ultra-wide bandgap Ga2O3 technologies: benefits of heterogenous integration

Reads Similar to This

Quantum-randomized polarization of laser pulses derived from zero-point diamond motion Cubic Stuffed-Diamond Semiconductors LiCu3TiQ4 (Q = S, Se, and Te) High Performance ${beta}$ -Ga2O3 Nano-Membrane Field Effect Transistors on a High Thermal Conductivity Diamond Substrate