Preparation of High Conductivity Hydrogenated Silicon-Doped Diamond and MOSFET
At a Glance
Section titled “At a Glance”| Metadata | Details |
|---|---|
| Publication Date | 2024-03-13 |
| Journal | IEEE Transactions on Electron Devices |
| Authors | Qi He, Jinfeng Zhang, Zihui Zhu, Zeyang Ren, Xinxin Yu |
| Institutions | Wuhu Institute of Technology, Xidian University |
| Citations | 2 |
Abstract
Section titled “Abstract”Hydrogenated silicon-doped (Si-doped) diamond was prepared by magnetron sputtering silicon on IIa CVD diamond surface and following Si etch/diffuse process at 1000 °C in a hydrogen atmosphere in MPCVD. The silicon doping concentration was higher than <inline-formula xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”> <tex-math notation=“LaTeX”>$1\times 10^{{18}}$ </tex-math></inline-formula> cm−3 among the depth of 25 nm. The hydrogenated Si-doped diamond surface demonstrated the simultaneous presence of C-H and C-Si bonds in the X-ray photoelectron spectroscopy (XPS) results, and a square resistance of 5500 <inline-formula xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”> <tex-math notation=“LaTeX”>$\Omega $ </tex-math></inline-formula> /sq with the hole concentration of <inline-formula xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”> <tex-math notation=“LaTeX”>$1.4\times 10^{{13}}$ </tex-math></inline-formula> cm−2 by contact Hall test. MOSFET fabricated on the hydrogenated Si-doped diamond using traditional hydrogenated diamond device process showed decent device performance. The gold/hydrogenated Si-doped diamond electrodes showed ohmic contact resistivity of <inline-formula xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”> <tex-math notation=“LaTeX”>$1.02\times 10^{-{5}},,\Omega \cdot $ </tex-math></inline-formula> cm−2 and a contact resistance of 2.4 <inline-formula xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”> <tex-math notation=“LaTeX”>$\Omega \cdot $ </tex-math></inline-formula> mm. Besides, the 1.5- <inline-formula xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”> <tex-math notation=“LaTeX”>$\mu \text{m}$ </tex-math></inline-formula> MOSFET device with a threshold voltage of 1.4 V delivered the maximum drain current, ON-resistance, maximum transconductance, and ON/ OFF ratio of −270.5 mA/mm, 39.6 <inline-formula xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”> <tex-math notation=“LaTeX”>$\Omega \cdot $ </tex-math></inline-formula> mm, 42.4 mS/mm and 8 orders of magnitude. The gate breakdown field and the OFF-state source-drain breakdown field reached 8.4 and 2.17 MV/cm, respectively. The hydrogenated Si-doped diamond provided a promising route for the preparation of high-performance diamond FET devices.