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6CCVD Research

Electronic structures of metal/H-diamond (111) interfaces by ab-initio studies

At a Glance

Section titled “At a Glance”
MetadataDetails
Publication Date2024-05-31
JournalJournal of Physics D Applied Physics
AuthorsErqi Xu, Zhiyang Xie, Chunmin Cheng, Xiaofei He, Wei Shen
InstitutionsPeking University, Shanghai Shipbuilding Technology Research Institute
Citations2

Abstract

Section titled “Abstract”

Abstract With ultra-wide bandgap and outstanding thermal properties, diamond-based high-power devices have excellent application prospects. The crystal structure and electronic property of the metal/hydrogen-terminated diamond (H-diamond) interfaces have been extensively studied experimentally, but the Schottky barrier height (SBH) theory at the metal/H-diamond interface has not been systematically investigated yet. In this work, SBHs of interfaces formed by H-diamond (111) surfaces with 12 metals (Y, Sc, Mg, Ag, Al, Ti, Cu, Co, Pd, Ni, Au and Pt) are investigated using ab-initio calculations. The fitted curve of the SBH with respect to the metal work function is obtained with a Fermi pinning factor of 0.30, which is close to the empirical value of 0.36. Due to the negative electron affinity of H-diamond, Schottky contacts can be formed with low work function metals, which is useful in device design to regulate the SBH and it is relatively easier to form ohmic contacts with high work function metals, leading to low contact resistances. Our work sheds light on the rational design of diamond-based semiconductor devices with low contact resistances.

Tech Support

Section titled “Tech Support”

Original Source

Section titled “Original Source”

References

Section titled “References”
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