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Synthesis and Mechanism Study of Carbon Nanowires, Carbon Nanotubes, and Carbon Pompons on Single-Crystal Diamonds

MetadataDetails
Publication Date2024-05-21
JournalCrystals
AuthorsShuai Wu, Qiang Wang, Kesheng Guo, Lei Liu, Jie Bai
InstitutionsJi Hua Laboratory, Chongqing Jiaotong University
Citations3
AnalysisFull AI Review Included

This study successfully demonstrates the selective synthesis of three distinct carbon nanomaterials—Carbon Pompons (CPs), Carbon Nanowires (CNWs), and Carbon Nanotubes (CNTs)—on single-crystal diamond substrates using high-power Microwave Plasma Chemical Vapor Deposition (MPCVD).

  • Selective Deposition Control: The morphology of the deposited carbon was precisely controlled by adjusting the substrate surface condition (rectangular pits vs. flat surface) and the nitrogen (N2) flow rate.
  • Heterostructure Integration: This work establishes a novel approach for integrating diamond with carbon nanomaterials, producing robust heterostructures under high-power conditions.
  • Role of Substrate Morphology: CPs (20 ”m diameter) were selectively grown inside rectangular diamond pits, where plasma-enhanced etching resulted in a localized temperature increase (55 K higher than flat surfaces).
  • Role of N2 Flow Rate: N2 concentration was identified as the critical factor differentiating CNW and CNT growth on Mo catalyst films. Low N2 flow (3 sccm) yielded solid CNWs (80 nm diameter), while high N2 flow (9 sccm) yielded hollow CNTs (400 nm diameter).
  • Catalytic Mechanism: Optical Emission Spectroscopy (OES) confirmed that the introduction of N2 promoted the formation of CN groups, which, along with C2 groups, played vital catalytic roles in guiding carbon atom precipitation at the Mo/diamond interface.
  • Structural Confirmation: Raman spectroscopy confirmed the presence of stress-induced blue shifts in CNTs and CNWs, and defect peaks associated with the formation of CPs.

The following table summarizes key operational parameters and resulting material characteristics derived from the four primary experiments.

ParameterValueUnitContext
Substrate TypeCVD (100) Type IIbN/ASingle-crystal diamond
Microwave Frequency2450MHzMPCVD System
Max Operating Pressure300TorrMPCVD System capability
CP Average Diameter20”mDeposited in rectangular pit (Expt 1)
CNP Average Diameter10”mDeposited on flat surface (Expt 2)
CNW Average Diameter80nmMo-catalyzed (Expt 3)
CNT Average Diameter400nmMo-catalyzed (Expt 4)
Mo Catalyst Thickness150nmSputtered film for CNW/CNT growth
Temperature Difference (Pit vs. Flat)55KDifference between CP (1258 K) and CNP (1203 K) sites
CNT Raman Shift (Diamond Peak)1337cm-1Blue-shifted due to internal stresses
CNW Raman Shift (Diamond Peak)1330cm-1Accompanied by a broad graphite peak

The synthesis utilized a butterfly-shaped resonant cavity MPCVD system capable of high-power operation (>10 kW).

  1. Substrate Preparation:

    • Substrates were 3x3 mm CVD (100) single-crystal diamonds.
    • Wet chemical cleaning involved heating in H2SO4/HNO3 (1:1) at 473 K, followed by ultrasonic treatment in deionized water, ethanol, and acetone.
    • For CNW/CNT growth (Expts 3 & 4), a 150 nm Mo film was deposited via magnetron sputtering to serve as the catalyst, forming MoC during growth.
  2. CP/CNP Deposition (Expts 1 & 2, No N2):

    • Gas Mixture: 300 sccm H2, 45 sccm CH4.
    • Power/Pressure: 5 kW, 100 Torr.
    • Temperature Control: CP growth occurred in the rectangular pit (1258 K); CNP growth occurred on the flat surface (1203 K).
    • Outcome: CP formation was driven by high temperature and plasma-enhanced etching within the pit region.
  3. CNW Deposition (Expt 3, Low N2):

    • Substrate: Mo-coated diamond.
    • Gas Mixture: 200 sccm H2, 45 sccm CH4, 3 sccm N2.
    • Power/Pressure: 4 kW, 80 Torr.
    • Temperature: 973 K.
    • Outcome: Solid Carbon Nanowires (CNWs) were formed, attributed to the lower N2 flow rate.
  4. CNT Deposition (Expt 4, High N2):

    • Substrate: Mo-coated diamond.
    • Gas Mixture: 200 sccm H2, 45 sccm CH4, 9 sccm N2.
    • Power/Pressure: 4.5 kW, 80 Torr.
    • Temperature: 993 K.
    • Outcome: Hollow Carbon Nanotubes (CNTs) were formed, facilitated by the higher N2 flow rate promoting CN group formation and methane decomposition.

The ability to integrate highly stable carbon nanomaterials directly onto single-crystal diamond substrates opens pathways for advanced composite materials in several high-performance sectors.

Industry/ApplicationRelevance to Diamond-Carbon Heterostructures
Advanced MicroelectronicsDiamond’s high carrier mobility and low dielectric constant, combined with the conductive network provided by CNWs/CNTs, are ideal for fabricating high-frequency, high-power electronic devices and vacuum nanoelectronics emitters.
Thermal Management SystemsUtilizing the superior thermal conductivity of diamond (24 W/cm·K) as a substrate, with integrated CNTs/CNWs acting as efficient thermal pathways, for cooling high-density integrated circuits and power modules.
Mechanical and Tribological CoatingsCreation of super-hard, low-friction coatings for cutting tools and mechanical parts. Covalent bonding between the carbon nanostructures and the diamond substrate ensures high adhesion and reduced wear (up to 20% reduction reported in related studies).
Electrochemical Sensing and CatalysisCNTs grown on diamond (BDD) substrates exhibit enhanced effective electrode area and heightened sensitivity, making them suitable for advanced biosensors and electrochemical reactors.
Diffractive Optics and PhotonicsPotential for creating novel composite optical elements where the carbon nanostructures are used to tailor surface properties or enhance light interaction on the diamond surface.
View Original Abstract

Carbon nanomaterials are in high demand owing to their exceptional physical and chemical properties. This study employed a mixture of CH4, H2, and N2 to create carbon nanostructures on a single-crystal diamond using microwave plasma chemical vapor deposition (MPCVD) under high-power conditions. By controlling the substrate surface and nitrogen flow rate, carbon nanowires, carbon nanotubes, and carbon pompons could be selectively deposited. The results obtained from OES, SEM, TEM, and Raman spectroscopy revealed that the nitrogen flow rate and substrate surface conditions were crucial for the growth of carbon nanostructures. The changes in the plasma shape enhanced the etching effect, promoting the growth of carbon pompons. The CN and C2 groups play vital catalytic roles in the formation of carbon nanotubes and nanowires, guiding the precipitation and composite growth of carbon atoms at the interface between the Mo metal catalysts and diamond. This study demonstrated that heterostructures of diamond-carbon nanomaterials could be produced under high-power conditions, offering a new approach to integrating diamond and carbon nanomaterials.

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