Compensation Ratio of Acceptor Centers in Different Growth Sectors of Boron-Doped High-Pressure High-Temperature Diamond
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2024-06-03 |
| Journal | Technical Physics |
| Authors | D. D. Prikhodko, Vera O. Timoshenko, Š”. Š. Š¢Š°ŃŠµŠ»ŠŗŠøŠ½, Š. Š”. ŠŃŠ·Š½ŠµŃŠ¾Š², Nikolay V. Luparev |
| Institutions | Technological Institute for Superhard and Novel Carbon Materials, Moscow Institute of Physics and Technology |
Abstract
Section titled āAbstractāIn the production of power diamond electronic elements that are intended for high integral current, low-resistivity active substrates with a low concentration of lattice defects are used. Boron-doped diamond grown by the method of temperature gradient at high pressure and high temperature seems to be most promising for such substrates. Due to the incomplete ionization of acceptor centers in diamond at room temperature, the compensation ratio of these centers strongly influences the free carrier concentration in the material and, hence, on its electrical conductivity. In this article, the subject of research has been the temperature dependence of the electrical conductivity and Hall effect of moderately boron-doped diamond in different crystal growth sectors. It has been shown that the compensation ratio in the {111} growth sector is two to three orders of magnitude greater than in the {001} and {311} sectors. As a result, the electrical conductivity of the {001} and {311} sectors is roughly ~25 times as high as that of the {111} sector, although the boron total concentration in the latter is about ten times higher. Thus, the formation probability of donor centers in {001} and {311} sectors is more than 100 times lower than in the {111} sector. Results indicate that wafers cut from the {001} and {311} sectors are most promising for the production of electron devices with the proviso that a high boron concentration is achieved and the donor concentration remains low.