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6CCVD Research

Manipulating carbon related spin defects in boron nitride by changing the MOCVD growth temperature

At a Glance

Section titled ā€œAt a Glanceā€
MetadataDetails
Publication Date2024-06-12
JournalDiamond and Related Materials
AuthorsJakub Iwański, Jakub Kierdaszuk, Arkadiusz Ciesielski, Johannes Binder, Aneta Drabińska
InstitutionsUniversity of Warsaw
Citations4

Abstract

Section titled ā€œAbstractā€

A common solution for precise magnetic field sensing is to employ spin-active defects in semiconductors, with the NV center in diamond as a prominent example. However, the three-dimensional nature of diamond limits the obtainable proximity of the defect to the sample. Two-dimensional boron nitride, which can host spin-active defects, can be used to overcome those limitations. In this work, we study spin properties of sp2-bonded boron nitride layers grown using Metal Organic Chemical Vapor Deposition at temperatures ranging from 700 Ā°C to 1200 Ā°C. With Electron Spin Resonance (ESR) we show that our layers exhibit spin properties, which we ascribe to carbon related defects. Supported by photoluminescence and Fourier-transform infrared spectroscopy, we distinguish three different regimes: (i) growth at low temperatures with no ESR signal, (ii) growth at intermediate temperatures with a strong ESR signal and a large number of spin defects, (iii) growth at high temperatures with a weaker ESR signal and a lower number of spin defects. The observed effects can be further enhanced by an additional annealing step. Our studies demonstrate wafer-scale boron nitride that intrinsically hosts spin defects without any ion or neutron irradiation, which may be employed in spin memories or magnetic field detectors.

Tech Support

Section titled ā€œTech Supportā€

Original Source

Section titled ā€œOriginal Sourceā€

References

Section titled ā€œReferencesā€
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  2. 2024 - Exploring the properties of the VBāˆ’ defect in hBN: optical spin polarization, Rabi oscillations, and coherent nuclei modulation [Crossref]
  3. 2022 - Coherent dynamics of multi-spin V$${ }_{{{{{{{{\rm{B}}}}}}}}}^{-}$$ center in hexagonal boron nitride [Crossref]
  4. 2021 - Room temperature coherent control of spin defects in hexagonal boron nitride [Crossref]
  5. 2022 - Room-temperature optically detected magnetic resonance of single defects in hexagonal boron nitride [Crossref]
  6. 2021 - Creation of negatively charged boron vacancies in hexagonal boron nitride crystal by electron irradiation and mechanism of inhomogeneous broadening of boron vacancy-related spin resonance lines [Crossref]
  7. 2023 - Unidirectional domain growth of hexagonal boron nitride thin films
  8. 2014 - Electronics based on two-dimensional materials [Crossref]
  9. 2013 - Van der Waals heterostructures [Crossref]
  10. 2021 - Quantum sensors go flat [Crossref]

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