(Invited) Preparation of N-Type and P-Type Doped Single Crystal Diamonds with Laser-Induced Doping and Microwave Plasma Chemical Vapor Deposition
At a Glance
Section titled âAt a Glanceâ| Metadata | Details |
|---|---|
| Publication Date | 2024-08-09 |
| Journal | ECS Meeting Abstracts |
| Authors | Linhai Guo, Tian Li, Hui Wang, Lingxue Meng, Chujun Feng |
| Citations | 1 |
Abstract
Section titled âAbstractâIn this study, n-type doped single crystal diamonds were successfully prepared under normal temperature and pressure conditions using laser-induced doping. 248nm pulsed laser beams with nanosecond duration were irradiated on the single crystal diamond substrate immersing in an 85% phosphoric acid solution and it introduced phosphorus doping to form an n-type doped thin layer. The resistivity of the doped region significantly decreased compared to that of the single crystal diamond. After depositing a titanium electrode, the resistivity of the doped film obtained by Van der Pauw Technique was determined to be 1.3Ă10 -6 Ω·m. Raman spectroscopy confirmed the absence of carbon or graphite phases in the laser-induced doped diamond, indicating that the enhanced conductivity was due to phosphorus incorporation. Furthermore, p-type doped single crystal diamonds were successfully prepared by introducing boron during the growth process using Microwave Plasma Chemical Vapor DepositionïŒMPCVDïŒ. It was demonstrated that the proposed technique can introduce impurities into single crystal diamonds to form doped conductive thin layers, which has potential applications in the field of microdevices and integrated circuits.