MoSe2xTe2–2x alloy for hydrogen gas detection
At a Glance
Section titled “At a Glance”| Metadata | Details |
|---|---|
| Publication Date | 2024-12-10 |
| Journal | Sensors and Actuators A Physical |
| Authors | G. Tabares, Raúl Magro, L. Vázquez, A. M. Fernandez Navarro, N. Gordillo |
Abstract
Section titled “Abstract”This study presents one of the first detailed investigation into the out-of-plane growth of two-dimensional MoSe2xTe2-2x for three distinct Se:Te compositions, yielding the samples MoSe0.46Te1.55, MoSe0.55Te1.45, and MoSe0.64Te1.35. Scanning electron microscopy reveals the morphological evolution, showcasing nanoflakes predominantly grown in a random out-of-plane orientation. Raman spectroscopy confirms the crystal structure of MoSe2xTe2-2x samples, with no detectable traces of MoO3 or MoO2 precursors. Distinctive peaks validate the presence of MoSe2xTe2-2x, while spectral shifts suggest at compositional variations. Conductive-Atomic Force Microscopy (C-AFM) was used to quantify current flow between a diamond-doped AFM tip and the sample. Additionally, the resistances of compositions MoSe0.46Te1.55, MoSe0.55Te1.45, and MoSe0.64Te1.35 were characterized, yielding median values of 108.0 Ω, 25.4 kΩ, and 240.0 kΩ, respectively, indicating diverse electrical properties associated with Se content. Notably, the sample with the highest Se content exhibits increased resistivity as anticipated, consistent with XRD spectra results. Finally, gas-sensing performance is evaluated by assessing electrical resistance variations before and after exposure to H2 gas at various temperatures, revealing significant changes indicative of enhanced charge flow upon H2 exposure
Tech Support
Section titled “Tech Support”Original Source
Section titled “Original Source”References
Section titled “References”- 2007 - Electrical characterization and hydrogen gas sensing properties of a n-ZnO/p-SiC Pt-gate metal semiconductor field effect transistor [Crossref]
- 2020 - A route to detect H2 in ambient conditions using a sensor based on reduced graphene oxide [Crossref]
- 2015 - Two-dimensional transition metal dichalcogenide alloys: preparation, characterization and applications [Crossref]
- 2014 - Fully printed, rapid-response sensors based on chemically modified graphene for detecting NO2 at room temperature
- 2020 - Lateral MoS2 heterostructure for sensing small gas molecules [Crossref]
- 2010 - High yield fabrication of chemically reduced graphene oxide field effect transistors by dielectrophoresis [Crossref]
- 2020 - Enhanced adsorption sites in monolayer MoS2 pyramid structures for highly sensitive and fast hydrogen sensor [Crossref]
- 2022 - Pt nanoparticles on vertically aligned large-area MoS2 flakes for selective H2 sensing at room temperature