Ferromagnetic permalloy/p-type boron-doped diamond Schottky barrier diodes
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2025-01-06 |
| Journal | Applied Physics Letters |
| Authors | Makoto Kawano, Carlos Jorge da Cunha, Kazuyuki Hirama, Kazuhide Kumakura, Yoshitaka Taniyasu |
| Institutions | NTT Basic Research Laboratories |
Abstract
Section titled āAbstractāFerromagnetic permalloy/p-type boron (B)-doped diamond Schottky barrier diodes (SBDs) were demonstrated. The SBDs showed a clear rectifying behavior with a high on/off ratio of over 109 and an ideality factor close to unity at 300 K. The Schottky barrier height was 2.07 eV at the permalloy/B-doped diamond interface. The permalloy Schottky electrodes did not intermix with B-doped diamond and had almost the same magnetic properties as bulk permalloy.