Hydrogen-terminated single crystal diamond MOSFET with the dielectric of Ga2O3
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2025-01-02 |
| Journal | Journal of Applied Physics |
| Authors | Yan-Feng Wang, Wei Wang, Minghui Zhang, Guoqing Shao, Xin Zhao |
| Institutions | Xiāan Jiaotong University |
Abstract
Section titled āAbstractāIn this work, the first fabrication and investigation of normally-off single crystal hydrogen-sterminated diamond MOSFETs with Ga2O3 dielectric has been successfully carried out. 50-nm-thick Ga2O3 was deposited by electron-beam evaporation technique at room temperature. The maximum drain current was ā36 mA/mm, which was 164 times larger than previous work. Based on the transfer characteristic curve, the threshold voltage, on/off ratio and extrinsic transconductance were ā0.37 V, 2.3 Ć 107, and 9.8 mS/mm, respectively. The effective mobility of the MOSFET was calculated to be 264.1 cm2/V ā s at VGS = ā 1 V. This work may significantly promote the application of H-diamond FETs.