Skip to content
6CCVD Research

P-type surface charge transfer doping of diamond via low-dimensional transition metal oxides

At a Glance

Section titled “At a Glance”
MetadataDetails
Publication Date2025-01-13
JournalApplied Physics Letters
AuthorsXueting Wang, Defeng Liu, Xiaowei Wang, Xinjiang Wang, Lijun Zhang
InstitutionsJilin University, Liaocheng University
Citations3

Abstract

Section titled “Abstract”

Device applications of ultra-wide-bandgap diamond rely on the precise control of both carrier type and concentration. However, due to the strong covalent bonds in bulk diamond, conventional doping methods have struggled to achieve large-scale tuning of its properties. Surface charge transfer doping (SCTD) is seen as a simple and effective solution, leveraging energy-level differences between surface dopant and the semiconductor to regulate carrier properties efficiently. Here, we conducted a comprehensive theoretical study on p-type SCTD of hydrogen-terminated diamond (100) surface [diamond(100):H] using low-dimensional transition metal oxides. The doping effects of the molecular MoO3 and monolayer MoO3 were first explored. The areal hole density for molecular-MoO3-doped diamond(100):H sharply rises and then slightly decreases with increasing MoO3 density, reaching a peak of 7.55 × 1013 cm−2—surpassing the maximum value achieved with a MoO3 monolayer. For identical MoO3 densities, a stronger interaction with diamond(100):H results in a greater areal hole density. We also studied one-dimensional chain-like CrO3 and two-dimensional layered V2O5. However, a V2O5 monolayer cannot achieve the saturation areal hole density due to the large energy separation between the conduction band minimum (CBM) of V2O5 and the valence band maximum (VBM) of diamond(100):H. Increasing the number of V2O5 monolayers will enhance the doping effect. Overall, optimal doping can be achieved with smaller dimensions, higher density and thickness of the transition metal oxides, stronger interactions with diamond(100):H, and a larger energy separation between the dopant’s CBM and diamond(100):H‘s VBM. This study provides theoretical guidance to develop superior diamond-based electronic and optoelectronic devices.

Tech Support

Section titled “Tech Support”

Original Source

Section titled “Original Source”

References

Section titled “References”
  1. 2021 - Diamond for electronics: Materials, processing and devices [Crossref]
  2. 2023 - Ultra-resilient multi-layer fluorinated diamond like carbon hydrophobic surfaces [Crossref]
  3. 2020 - Diamond semiconductor performances in power electronics applications [Crossref]
  4. 2024 - Growth of diamond in liquid metal at 1 atm pressure [Crossref]
  5. 2024 - Tuning the electronic and mechanical properties of two-dimensional diamond through N and B doping [Crossref]
  6. 2020 - Transparent ohmic contact for boron doped diamond using p-type NiO film synthesized through oxidation [Crossref]
  7. 2011 - Thick boron doped diamond single crystals for high power electronics [Crossref]
  8. 2004 - Surface transfer doping of diamond [Crossref]
  9. 2009 - Surface transfer doping of semiconductors [Crossref]
  10. 2023 - Toward high-performance p-type two-dimensional field effect transistors: Contact engineering, scaling, and doping [Crossref]

Reads Similar to This

Finite bias evolution of bosonic insulating phase and zero bias conductance in boron-doped diamond - A charge-Kondo effect Towards surface-enlarged diamond materials - creation of surface-enlarged diamond electrodes for electrochemical energy applications Measurement Sensitivity of the Optically Detected Magnetic Resonance for a Single NV– Center in Diamond