Research on Application of diamond MOSFET in DCDC converter
At a Glance
Section titled âAt a Glanceâ| Metadata | Details |
|---|---|
| Publication Date | 2025-01-15 |
| Journal | Applied and Computational Engineering |
| Authors | Ruitong Gao |
| Institutions | Jilin University |
| Analysis | Full AI Review Included |
Research on Application of Diamond MOSFET in DCDC Converter: Technical Analysis
Section titled âResearch on Application of Diamond MOSFET in DCDC Converter: Technical AnalysisâExecutive Summary
Section titled âExecutive SummaryâThis research proposes integrating Diamond MOSFETs into DC-DC (DCDC) converters to overcome the inherent performance limitations of current Silicon (Si) and wide-bandgap (WBG) materials like Silicon Carbide (SiC) and Gallium Nitride (GaN).
- Core Value Proposition: Diamond, the âultimate semiconductor,â offers superior material properties (highest thermal conductivity, largest band gap, highest breakdown field) necessary for next-generation power electronics.
- Performance Targets: Application of Diamond MOSFETs is expected to significantly improve DCDC converter operating frequency, input/output voltage range, output power density, and overall efficiency.
- Key Material Metrics: Diamond boasts a 5.47 eV band gap and an insulation strength 33 times that of silicon, enabling high-temperature and high-pressure operation.
- Device Achievements: Recent breakthroughs include achieving a breakdown voltage up to 3659 V and developing the worldâs first N-type channel-driven diamond MOSFET (2024), addressing historical doping challenges.
- Current Limitation: Industrial mass production is currently hindered by high production costs and immature growth processes for high-quality, large-scale diamond material.
- Proposed Methodology: Future research should leverage the mature application models of SiC/GaN in DCDC circuits, utilizing simulation tools (Simulink/Simscape) for loss analysis and redesigning drive circuits to match diamond device limits.
Technical Specifications
Section titled âTechnical SpecificationsâThe following table summarizes key material properties and device performance metrics extracted from the research, highlighting diamondâs superiority over conventional semiconductors.
| Parameter | Value | Unit | Context |
|---|---|---|---|
| Band Gap Width | 5.47 | eV | Pure diamond semiconductor |
| Breakdown Electric Field (Relative) | ~10 | times | Compared to GaN |
| Breakdown Electric Field (Relative) | ~3 | times | Compared to SiC |
| Insulation Strength (Relative) | 33 | times | Compared to Silicon |
| Maximum Breakdown Voltage | 3659 | V | P-type doped diamond MOSFET (2020) |
| Figure of Merit (FOM) | > 673 | V¡mS/mm | Hydrogen terminal diamond device (2022) |
| External Transconductance | 65 | mS/mm | Single crystal diamond device (50 nm gate length) |
| Intrinsic Transconductance | 650 | mS/mm | Single crystal diamond device (50 nm gate length) |
| Saturation Leakage Current | 290 | mA/mm | Single crystal diamond device (50 nm gate length) |
| Thermal Stability (Proven) | 200 | °C | High-performance diamond MOSFET operation |
| Largest Single Crystal Size | 10 | mm | Reported CVD single crystal side length (China) |
Key Methodologies
Section titled âKey MethodologiesâThe research outlines both historical fabrication achievements and the proposed engineering methodology for integrating Diamond MOSFETs into DCDC converters.
Device Fabrication and Material Growth Status
Section titled âDevice Fabrication and Material Growth Statusâ- CVD Growth: Focus on Chemical Vapor Deposition (CVD) techniques to achieve large-side-length single crystal diamond materials (up to 10 mm reported).
- Gate Dielectric Deposition: Alumina films were deposited on hydrogen-ended diamond surfaces, enabling MOSFET operation under vacuum at 450 °C.
- N-Type Doping Breakthrough: Recent efforts focus on creative breakthroughs in obtaining impurity elements and doping methods necessary for low-resistivity N-type diamond channels.
- Performance Optimization: Development of devices using MoO3 gate media resulted in reducing on-resistance to one-third and increasing transconductance by approximately three times compared to world-equivalent gate-long devices.
Proposed DCDC Converter Integration Strategy
Section titled âProposed DCDC Converter Integration StrategyâThe suggested path for applying diamond MOSFETs involves simulation and loss analysis, learning from established WBG integration:
- Analogous Application: Use the mature application mode of SiC or GaN MOSFETs in DCDC converters as a blueprint for diamond integration.
- Circuit Simulation: Utilize Simulink and the Simscape Electrical component library for initial circuit modeling.
- Topology Selection: Build the LLC resonant converter simulation diagram based on laboratory parameters for high-voltage, high-power diamond MOSFETs.
- Parameter Analysis: Analyze how diamond MOSFET parameters (operating frequency, on-resistance, voltage tolerance) affect converter output characteristics (efficiency, switching loss, power density).
- Detailed Loss Analysis: Calculate the loss of the built circuit, separating contributions from:
- Switching tube loss (conduction and switching losses).
- Rectifier diode loss.
- Magnetic component loss.
- Drive Circuit Redesign: Redesign the drive circuit structure to optimally match and utilize the limiting performance characteristics of the diamond power devices.
Commercial Applications
Section titled âCommercial ApplicationsâDiamond MOSFET technology is positioned to disrupt several high-demand sectors currently limited by silicon and first/second-generation WBG materials.
- High-Power Conversion Systems:
- DCDC Converters requiring high output power, high efficiency, and miniaturization.
- Advanced Switching Power Supplies (high power density development).
- Transportation and Energy:
- New Energy Vehicles (requiring high reliability and high output power components).
- Data and Communications Infrastructure:
- Base Stations (5G/6G technology).
- Data Centers (high current and high efficiency requirements).
- Extreme Environment Electronics:
- High-temperature and high-pressure applications where SiC/GaN performance degrades.
- Radiation-resistant integrated circuits.
- Specialized High-Frequency Devices:
- Millimeter wave amplifiers.
- Anti-radiation device materials.
View Original Abstract
This paper focuses on the industrial application of diamond power devices and DCDC converters, carries out the application research of diamond MOSFET in DCDC converters, analyzes the limitations of current silicon-based DCDC converters and how diamond MOSFET should make up for this limitation. This paper summarizes the research on the practical application of diamond power devices at home and abroad and points out that there is a gap in the application of diamond MOSFETs in DCDC converters. Diamond has the advantages of a large band gap, high carrier mobility, high temperature and high pressure resistance, so the application of diamond MOSFET in a DCDC converter can improve its operating frequency, input and output voltage and efficiency. This paper also discusses the difficulties encountered by diamond semiconductor materials and diamond power devices in the research and industrial fields, as well as the research status of diamond semiconductor materials at home and abroad, and gives the research method for the future application of diamond MOSFET in DCDC converters. The study can use the analogy of applying SiC or GaN to DCDC converters improving their performance, and redesigning the drive circuit to match the limiting performance of diamond power devices. By applying diamond MOSFET into the DCDC converter, its operating voltage, operating frequency, output power and efficiency will be greatly improved.