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6CCVD Research

Research on hybrid processing of silicon carbide based on laser cutting

At a Glance

Section titled ā€œAt a Glanceā€
MetadataDetails
Publication Date2025-01-17
JournalSemiconductor Science and Technology
Authorsjinhu Wang, Kai Jiang, X.M. Yue, Qianyong Zhang, Chaoyang Wang
Citations1

Abstract

Section titled ā€œAbstractā€

Abstract With the rapid development of semiconductor technology, silicon carbide has been widely used in various power electronic device. However, the material has an extremely high hardness ranking second only to diamond, which makes processing difficult. In this work, the two methods of laser cutting and dicing saw are utilized to test the cutting process of silicon carbide respectively, then the appropriate through-cutting process parameters are obtained. The two methods are combined to compare the cutting quality of the three approaches. As a result, the laser cutting is affected by heat with through-cutting 0.5 mm-thick silicon carbide, which results in the rough front-surface edge and much residue, and the cutting groove of the back surface is irregular. The dicing saw having more mechanical stress, resulting in serious tool wear, prone to chipping and micro-cracks and other phenomena, the back surface chipping is as high as 171.6 Āµ m. The hybrid processing method not only reduces the degree of thermal damage, but also reduces tool wear, and the front surface is flat and clean after cutting, without a chipping phenomenon, and the back surface chipping is only 7.9 Āµ m, which is 20 times lower than the dicing saw method.

Tech Support

Section titled ā€œTech Supportā€

Original Source

Section titled ā€œOriginal Sourceā€

References

Section titled ā€œReferencesā€
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  7. 2015 - Surface activated bonding of GaAs and SiC wafers at room temperature for improved heat dissipation in high-power semiconductor lasers [Crossref]
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