Enhancement to the conductivity of surface transfer-doped (111) diamond through thermochemical surface etching
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2025-02-17 |
| Journal | Applied Physics Letters |
| Authors | Steve Yianni, Alastair Stacey, Daniel L. Creedon, Kaijian Xing, Alex K. Schenk |
| Institutions | Monash University, Princeton Plasma Physics Laboratory |
Abstract
Section titled āAbstractāThe use of a transition metal catalyzed thermochemical etching method for improving the carrier transport properties of the near-surface two-dimensional (2D) hole gas in surface transfer-doped hydrogen-terminated (111) diamond is demonstrated. Using Ni0.8Cr0.2 films deposited and annealed to a temperature of 900 Ā°C, with up to three etch cycles, preferential (111) surface etching produces large terraces exceeding 10 Ī¼m in size with a surface microroughness, ĻRMS2Ī», that is two orders of magnitude lower than for the pre-etched (111) surface. Magnetotransport measurements on hydrogen-terminated Hall bars engineered on the pre- and post-etched surfaces and rendered conductive by the adsorbed water layer formed on exposure to ambient conditions demonstrate that this etching causes an improvement in the hole mobility by an order of magnitude, resulting in a measured sheet resistivity of 1.04 kĪ©/sq at a temperature of 4.2 K without gating.
Tech Support
Section titled āTech SupportāOriginal Source
Section titled āOriginal SourceāReferences
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