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6CCVD Research

On the Origin of S-Shaped Current-Voltage Characteristics under Electric-Field Ionization of

At a Glance

Section titled ā€œAt a Glanceā€
MetadataDetails
Publication Date2025-02-09
JournalRadioelectronics Nanosystems Information Technologies
AuthorsMiron S. Kagan, S. K. Paprotskiy, N. A. Khvalkovskiy, R. A. Khmelnitsky, J. Kolodzey

Abstract

Section titled ā€œAbstractā€

Analytical calculations were performed to determine the conditions for the formation of S-shaped current-voltage characteristics in a semiconductor doped with attractive impurities, taking into account the reduction of the impurity barrier in an electric field due to the Frenkel-Poole effect. Experimental data are presented, and the absence of S-shaped behavior in the current-voltage characteristics of heavily compensated germanium and boron-doped diamond is explained.

Tech Support

Section titled ā€œTech Supportā€

Original Source

Section titled ā€œOriginal Sourceā€

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