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Comparative Molecular Dynamics Study of Graphitization Mechanisms in Nanosecond Laser Irradiation of Single-Crystal and Nanocrystalline Diamond

MetadataDetails
Publication Date2025-04-25
JournalOptics
AuthorsHuixin Yuan, Liang Zhao, Weimian Guan, Yuqi Yang, Junjie Zhang
InstitutionsHarbin Institute of Technology
Citations1
AnalysisFull AI Review Included

This Molecular Dynamics (MD) study provides a comparative analysis of graphitization mechanisms in Single-Crystal Diamond (SCD) and Nanocrystalline Diamond (NCD) under nanosecond pulsed laser irradiation, offering critical insights for precision laser processing.

  • Microstructural Influence: The material microstructure dictates the phase transition pathway. Graphitization in SCD is localized and thermally driven, while in NCD, it preferentially initiates and expands along Grain Boundaries (GBs).
  • Driving Mechanism: The primary mechanism for graphitization in NCD is the concentration of thermal stress and lower bonding energy at GBs, making these regions highly susceptible to the sp3-to-sp2 transformation.
  • Stress Distribution: SCD exhibits high stress concentrated near the ablation pit, leading to localized graphitization. NCD shows a broader, higher overall stress distribution, particularly around GBs, promoting wider phase transformation.
  • Phase Transition Type: The simulation confirms a direct solid-state phase transition from diamond (sp3) to highly oriented graphite (sp2), without an intermediate molten carbon phase, driven by rapid thermal expansion and cooling.
  • Energy Density Effect: Increasing laser energy density (10 J/cm2 to 30 J/cm2) significantly expands the ablation pit size, exacerbates volumetric expansion, and increases the quantity of layered graphite formed in both materials.
  • Theoretical Foundation: This research provides a theoretical basis for controlling surface modification processes in diamond materials by highlighting the crucial role of microstructure and thermal stress distribution.
ParameterValueUnitContext
Simulated Laser Fluence Range10 to 30J/cm2Energy density applied during irradiation stage.
MD Simulation Time Step0.5fsTime step used in LAMMPS simulations.
Initial Equilibration Temperature300KTemperature maintained during the relaxation stage.
C-C Bond Cutoff Distance1.6AUsed to define coordination number (slightly > first nearest neighbor distance).
High-Intensity Irradiation Phase20psSimulated duration approximating the peak intensity of the nanosecond pulse.
Ablation Pit Temperature (Peak)> 2000KTemperature reached in the localized ablation zone.
Graphitization Initiation Temperature (Cited)1475KTemperature threshold for graphite formation (sp2 hybridization).
Maximum Von Mises Stress250GPaPeak stress observed during laser irradiation.
Sample Dimensions (X x Y x Z)10 x 5 x 10nmDimensions of the SCD and NCD models.
  1. MD Model Construction: Single-Crystal Diamond (SCD) was constructed along the (010) plane. Nanocrystalline Diamond (NCD) was modeled using Atomsk Beta 0.13.1 and the Voronoi algorithm to generate randomly oriented grains.
  2. Boundary Conditions: Periodic boundary conditions were applied in the X and Z directions, with a free surface in the Y direction.
  3. Interatomic Potential: The Second-Generation Reactive Empirical Bond Order (REBO) potential was utilized to accurately simulate atomic-scale non-equilibrium phase transitions and carbon-carbon bond hybridization (sp3 and sp2).
  4. Laser Energy Deposition: Nanosecond pulsed laser energy was approximated by localized kinetic energy loading (velocity-rescaling algorithm) applied to surface atoms within a 1 nm diameter irradiated area.
  5. Simulation Stages: The process was divided into three sequential stages:
    • Relaxation (20 ps): Equilibration under NPT ensemble (300 K, 0 bar).
    • Irradiation (20 ps): Energy deposition phase (no thermostat).
    • Energy Decay (20 ps): Thermal relaxation under NPT ensemble.
  6. Structural Analysis: Post-processing using Ovito software included analysis of:
    • Coordination Number (CN) mapping to track sp3-to-sp2 conversion.
    • Radial Distribution Function (RDF) and Bond Angle Distribution (BAD) to confirm the solid-state transition and the coexistence of diamond and graphite phases.
    • Von Mises stress distribution to track thermal stress evolution.

The findings regarding controlled graphitization and material response under laser irradiation are crucial for advanced diamond manufacturing and engineering applications.

  • Advanced Tooling and Wear Parts:
    • Optimizing laser texturing and surface finishing of NCD cutting tools and tribological coatings. The high susceptibility of NCD GBs to graphitization requires precise fluence control to maintain structural integrity and hardness.
  • Diamond Semiconductor Fabrication:
    • Creating highly conductive graphitic electrodes or interconnects on insulating SCD substrates via localized laser patterning. The localized stress in SCD allows for high-resolution feature creation.
  • Micro/Nano-Electromechanical Systems (MEMS/NEMS):
    • Enabling precise internal scribing and material removal for fabricating diamond-based sensors and actuators, where control over subsurface phase transitions is paramount for device reliability.
  • High-Power Optical Components:
    • Laser processing of diamond optical windows and heat spreaders. Understanding the thermal stress distribution prevents catastrophic failure (cracking, fragmentation) caused by uncontrolled graphitization and volumetric expansion.
  • Surface Functionalization:
    • Developing methods for controlled surface graphitization to tailor diamond’s electronic or chemical properties for applications like field emission devices or electrochemical sensors.
View Original Abstract

The mechanisms of material removal and structural transformation under laser radiation differ significantly between single-crystal diamond (SCD) and nanocrystalline diamond (NCD). This study employs atomic simulations to investigate the material removal mechanisms and structural transformation behaviors of SCD and NCD when subjected to laser irradiation. We analyze the effects of temperature and stress changes induced by laser radiation on structural transformations, revealing the driving mechanism behind graphitization transitions. Specifically, the thermal-mechanical coupling effect induced by lasers leads to graphitization in SCD, while in NCD, due to the stress concentration effects at the grain boundaries, graphitization preferentially occurs at these boundaries. The material removal processes for both SCD and NCD are attributed to thermal stress concentrations in the regions where the laser interacts with the diamond surface. This investigation provides a theoretical foundation for a more profound understanding of the behavior of diamond materials during laser irradiation.

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