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6CCVD Research

Defect investigation of undoped wide bandgap materials - Comparison between charge transient spectroscopy (QTS) and inverse Laplace QTS

At a Glance

Section titled ā€œAt a Glanceā€
MetadataDetails
Publication Date2025-04-15
JournalJournal of Applied Physics
AuthorsR. Yamazaki, Jan Isberg, Nattakarn Suntornwipat, Dmitrii Moldarev, Bjƶrn Magnusson
InstitutionsUppsala University, STMicroelectronics (Czechia)

Abstract

Section titled ā€œAbstractā€

Understanding the electrically active defects and impurities in semiconductors, especially in intrinsic or unintentionally doped wide bandgap materials, still remains a challenge. Here, time-of-flight (ToF) measurement using a solid state light source (355 and 213 nm) was performed on intrinsic silicon carbide and single-crystalline diamond. The charge transient spectroscopy (QTS) and the inverse Laplace (IL) QTS methods were applied to analyze the ToF results. Using these methods, we were able to trace the existing impurities in both materials. However, ILQTS proved to be more sensitive, with higher resolution for detection of existing multiple defects. The results suggest that this system can successfully be employed to investigate electrically active impurities at different energy states in highly resistive and undoped materials.

Tech Support

Section titled ā€œTech Supportā€

Original Source

Section titled ā€œOriginal Sourceā€

References

Section titled ā€œReferencesā€
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  2. 1974 - Deep-level transient spectroscopy: A new method to characterize traps in semiconductors [Crossref]
  3. 1978 - The electrical characterisation of semiconductors [Crossref]
  4. 1985 - The determination of deep level concentrations in high resistivity semiconductors by DLTS, with special reference to germanium [Crossref]
  5. 1999 - Scanning ion deep level transient spectroscopy [Crossref]
  6. 2016 - Investigation of electrically-active deep levels in single-crystalline diamond by particle-induced charge transient spectroscopy [Crossref]
  7. 1990 - Studies of defects in n-type CdTe by charge transient spectroscopy [Crossref]
  8. 2012 - Defects in an electron-irradiated 6H-SiC diode studied by alpha particle induced charge transient spectroscopy: Their impact on the degraded charge collection efficiency [Crossref]
  9. 2015 - Development of diagnostic method for deep levels in semiconductors using charge induced by heavy ion microbeams [Crossref]
  10. 2004 - Laplace-transform deep-level spectroscopy: The technique and its applications to the study of point defects in semiconductors [Crossref]

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