Optimization of Diamond Polishing Process for Sub-Nanometer Roughness Using Ar/O2/SF6 Plasma
At a Glance
Section titled “At a Glance”| Metadata | Details |
|---|---|
| Publication Date | 2025-06-03 |
| Journal | Materials |
| Authors | Lei Zhao, Xiangbing Wang, Minxing Jiang, Chao Zhao, Nan Jiang |
| Institutions | Ningbo Institute of Industrial Technology, Guilin University of Electronic Technology |
| Analysis | Full AI Review Included |
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## Executive Summary
* **Value Proposition:** Optimizes diamond polishing using Ar/O<sub>2</sub>/SF<sub>6</sub> plasma to achieve sub-nanometer roughness, enhancing its suitability for high-precision optical applications.* **Method:** Employs inductively coupled plasma (ICP) etching and atomic force microscopy (AFM) to analyze the impact of etching parameters on single-crystal diamond surface roughness.* **Key Parameters:** Explores the effects of Ar/O<sub>2</sub>/SF<sub>6</sub> gas flow ratio, ICP power, RF bias power, chamber pressure, and etching time.* **Achievement:** Significant reduction in surface roughness from 2.22 nm to 0.562 nm (74.7% decrease) using optimized parameters.* **Optimal Parameters:** Ar/O<sub>2</sub>/SF<sub>6</sub> gas flow ratio of 40/50/10 sccm, ICP power of 200 W, RF bias power of 40 W, chamber pressure of 20 mTorr, and etching time of 10 min.* **Impact:** Demonstrates the effectiveness of the optimized process for improving diamond surface quality.
## Technical Specifications
| Parameter | Value | Unit | Context
<details><summary><strong>View Original Abstract</strong></summary>
Diamond, known for its exceptional physical and chemical properties, shows great potential in advanced fields such as medicine, semiconductors, and optics. However, reducing surface roughness is critical for enhancing its performance. This study employs inductively coupled plasma (ICP) polishing to etch single-crystal diamond and analyzes the impact of different etching parameters on surface roughness using atomic force microscopy (AFM). Using the change in surface roughness before and after etching as the main evaluation metric, the optimal etching parameters were determined: Ar/O2/SF6 gas flow ratio of 40/50/10 sccm, ICP power of 200 W, RF bias power of 40 W, chamber pressure of 20 mTorr, and etching time of 10 min. Results show that increased etching time and SF6 flow rate raise surface roughness; although higher ICP and RF power reduce roughness, they also cause nanostructure formation, affecting surface quality. Lower chamber pressure results in smaller roughness increases, while higher pressure significantly worsens it. Based on the optimized process parameters, the pristine single-crystal diamond was further etched in this study, resulting in a significant reduction of the surface roughness from 2.22 nm to 0.562 nm, representing a 74.7% decrease. These improvements in surface roughness demonstrate the effectiveness of the optimized process, enhancing the diamond’s suitability for high-precision optical applications.
</details>
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## Original Source* **DOI:** <a href='https://doi.org/10.3390/ma18112615' target='_blank' rel='noopener noreferrer'>https://doi.org/10.3390/ma18112615</a>
## References
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