Skip to content
6CCVD Research

Surface chemistry of c-BN epitaxial growth on diamond substrates using fluorine-assisted ECR PECVD

At a Glance

Section titled ā€œAt a Glanceā€
MetadataDetails
Publication Date2025-06-01
JournalAPL Materials
AuthorsAvani Bharatkumar Patel, Saurabh Vishwakarma, David J. Smith, R. J. Nemanich
InstitutionsArizona State University
Citations2

Abstract

Section titled ā€œAbstractā€

Epitaxial films of cubic boron nitride (c-BN) have been grown on single-crystal boron-doped diamond substrates by electron cyclotron resonance plasma-enhanced chemical vapor deposition using gas mixtures of Ar-He-N2-BF3-H2. The resulting c-BN films have been characterized using in situ x-ray photoelectron spectroscopy to establish the growth surface bonding (i.e., sp3 or sp2). The interface and film crystal structure were characterized with high resolution electron microscopy and electron-energy-loss spectroscopy. This study considers three stages of the growth process: in situ surface preparation, initial nucleation and growth of c-BN, and growth of the epitaxial c-BN layer. Prior studies from our group have established that hydrogen gas phase concentration affects fluorine-induced etching and c-BN nucleation. The results of this study establish that by optimizing the surface chemistry for all three stages of the growth process, it is possible to achieve an adherent, oriented epitaxial c-BN layer, a workable growth rate (āˆ¼50 nm/hr), cubic phase BN throughout, and negligible sp2 bonding except at the interface.

Tech Support

Section titled ā€œTech Supportā€

Original Source

Section titled ā€œOriginal Sourceā€

References

Section titled ā€œReferencesā€
  1. 2014 - Cubic boron nitride: Properties and applications [Crossref]
  2. **** - Recent progress of boron nitrides [Crossref]
  3. 2017 - Recent developments of boron nitride towards electronic applications [Crossref]
  4. 2005 - Cubic boron nitride films for industrial applications [Crossref]
  5. 2004 - On the mechanisms of cubic boron nitride film growth [Crossref]
  6. 2001 - Physical properties of cubic boron nitride films synthesized by PVD using a bi-step process [Crossref]
  7. 2003 - Deposition of large-area, high-quality cubic boron nitride films by ECR-enhanced microwave-plasma CVD [Crossref]
  8. 1991 - Cubic boron nitride prepared by an ECR plasma [Crossref]
  9. 2001 - The introducing of fluorine into the deposition of BN: A successful method to obtain high-quality, thick cBN films with low residual stress [Crossref]
  10. 2000 - Formation of cubic boron nitride thin films using ECR plasma enhanced CVD [Crossref]

Reads Similar to This

A Peltier cooling diamond anvil cell for low-temperature Raman spectroscopic measurements Growth of Dual DLC and Icosahedral Boron Carbide Nano-Crystals by HFCVD ODMR spectroscopy of NV(ā€“) color centers in synthetic diamonds