Synthesis and Characterization of Diamond Single Crystals with Fe3P-Doped Under High Pressure and High Temperature
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2025-06-12 |
| Journal | NANO |
| Authors | Zhenghao Guo, Shangsheng Li, Yuan Nie, Qiang Hu, Meihua Hu |
| Institutions | Henan Polytechnic University, Tongren University |
Abstract
Section titled āAbstractāProblems with the electrical characteristics of [Formula: see text]-type semiconductor diamonds are difficult to overcome, which limits its application. Phosphorus doping is an important method for preparing [Formula: see text]-type semiconductor diamonds. In this study, large single crystals of phosphorus-doped diamonds were synthesized along the (100) plane at 5.6[Formula: see text]GPa and [Formula: see text] using the temperature gradient method (TGM) by incorporating [Formula: see text] into the FeNi catalyst. The crystal morphology showed that as the amount of [Formula: see text] increased, the diamond crystal shape transitioned from octahedron to cub-octahedron. This transformation was attributed to the altered catalyst characteristics caused by [Formula: see text], which resulted in a shift of the V-shaped region in diamond synthesis to the upper right. Additionally, the presence of twinning in the synthesized diamond crystals suggested that the addition of [Formula: see text] significantly disrupted normal crystal growth. The Fourier transform-infrared (FTIR) spectroscopy revealed that the nitrogen content ([Formula: see text] of the crystals increased with the proportion of [Formula: see text] raised, indicating that [Formula: see text] facilitated the incorporation of nitrogen into the diamond crystals. The Raman spectra demonstrated that as the proportion of [Formula: see text] increased, the diamondās Raman peak shifted to the left, indicating an increase in compressive stress in the diamonds. X-ray photoelectron spectroscopy (XPS) measurements confirmed the presence of phosphorus on the crystal surface. The results of the Hall effect measurement show that diamonds with [Formula: see text] single-doping are [Formula: see text]-type semiconductors. We believe this research contributes significantly to the advancement of [Formula: see text]-type semiconductor diamonds.