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6CCVD Research

(U)WBG materials for RF piezoelectric acoustics

At a Glance

Section titled “At a Glance”
MetadataDetails
Publication Date2025-06-01
JournalAPL Materials
AuthorsJiashuai Xu, Zijun Ren, Kai Yang, Yujia Tu, Pengcheng Zheng
InstitutionsHong Kong University of Science and Technology, University of Science and Technology of China

Abstract

Section titled “Abstract”

Ultra-wide bandgap/wide bandgap (UWBG/WBG) materials have revolutionized power electronics and ultraviolet solid-state lighting, attracting significant attention from researchers. However, beyond active devices, UWBG/WBG materials have also made remarkable contributions to radio frequency (RF) passive acoustic devices over the past decades. This paper provides a systematic and critical review of UWBG/WBG materials in RF passive acoustic applications, categorizing them into two functional groups: acoustic wave generators and acoustic wave restrainers. UWBG/WBG piezoelectric materials, including Al(Sc)N, LiNbO3 (or LN), GaN, and Δ-Ga2O3, are explored as effective acoustic wave generators, while SiC and diamond are evaluated as acoustic wave restrainers due to their high phase velocity and thermal conductivity. This review examines the crystal structures, electrical, and acoustic (mechanical) properties of these materials, as well as their synthesis methods and chronological advancements in RF passive acoustic applications. By integrating recent research findings and technological trends, this review highlights the transformative potential of UWBG/WBG materials in developing next-generation RF communication technologies.

Tech Support

Section titled “Tech Support”

Original Source

Section titled “Original Source”

References

Section titled “References”
  1. 2022 - Wide bandgap semiconductor materials and devices [Crossref]
  2. 2017 - Review of silicon carbide power devices and their applications [Crossref]
  3. 2018 - Ultrawide-bandgap semiconductors: Research opportunities and challenges [Crossref]
  4. 2022 - Next generation of BAW: The new benchmark for RF acoustic technologies
  5. 2024 - ScAlN BAW resonator technology with coupling coefficients up to 21% for high performance filter design
  6. 2023 - A manufacturable AlScN periodically polarized piezoelectric film bulk acoustic wave resonator (AlScN P3F BAW) operating in overtone mode at X and Ku band
  7. 2024 - 6.5 GHz BAW resonators and filters fabricated on single crystal AlN template
  8. 2022 - XBAW, an enabling technology for next generation resonators and filter solutions for 5G and Wi-Fi 6/6E/7 applications (invited)
  9. 2017 - High rejection UNII 5.2 GHz wideband bulk acoustic wave filters using undoped single crystal AlN-on-SiC resonators

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